J. Semicond. > 2008, Volume 29?>?Issue 12?> 2385-2388

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Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs

Ren Chunjiang, Chen Tangsheng, Jiao Gang, Chen Gang, Xue Fangshi and Chen Chen

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Abstract: NF3 plasma surface treatment in inductively coupled plasma (ICP) system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied.The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated.The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm.

Key words: AlGaN/GaN, HEMT, current collapse, NF3 plasma treatment

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    Received: 18 August 2015 Revised: 17 July 2008 Online: Published: 01 December 2008

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      Ren Chunjiang, Chen Tangsheng, Jiao Gang, Chen Gang, Xue Fangshi, Chen Chen. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(12): 2385-2388. ****Ren C J, Chen T S, Jiao G, Chen G, Xue F S, Chen C. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J]. J. Semicond., 2008, 29(12): 2385.
      Citation:
      Ren Chunjiang, Chen Tangsheng, Jiao Gang, Chen Gang, Xue Fangshi, Chen Chen. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(12): 2385-2388. ****
      Ren C J, Chen T S, Jiao G, Chen G, Xue F S, Chen C. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J]. J. Semicond., 2008, 29(12): 2385.

      Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China

      • National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing 210016,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-11
      • Revised Date: 2008-07-17
      • Published Date: 2008-12-09

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