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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1682-1685

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An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate

Wang Chong, Zhang Jinfeng, Quan Si, Hao Yue, Zhang Jincheng and Ma Xiaohua

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Abstract: Fabrication of enhancement-mode high electron mobility transistors on AlGaN/GaN heterostructures grown on sapphire substrates is reported.These devices with 1.2μm gate-length,4mm space between source and drain,and 15nm recessed-gate depth exhibit a maximum drain current of 332mA/mm at 3V,a maximum transconductance of 221mS/mm,a threshold voltage of 0.57V, ft of 5.2GHz,and fmax of 9.3GHz.A dielectric layer formed unintentionally during recessed-gate etching is confirmed by contrasting the Schottky I-V characteristics of pre-etching and post-etching.The frequency characteristics and subthreshold characteristics of the devices are studied in detail.

Key words: high electron mobility transistors, AlGaN/GaN, recessed-gate, threshold voltage

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    Received: 18 August 2015 Revised: 09 April 2008 Online: Published: 01 September 2008

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      Wang Chong, Zhang Jinfeng, Quan Si, Hao Yue, Zhang Jincheng, Ma Xiaohua. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J]. Journal of Semiconductors, 2008, 29(9): 1682-1685. ****Wang C, Zhang J F, Quan S, Hao Y, Zhang J C, Ma X H. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J]. J. Semicond., 2008, 29(9): 1682.
      Citation:
      Wang Chong, Zhang Jinfeng, Quan Si, Hao Yue, Zhang Jincheng, Ma Xiaohua. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J]. Journal of Semiconductors, 2008, 29(9): 1682-1685. ****
      Wang C, Zhang J F, Quan S, Hao Y, Zhang J C, Ma X H. An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate[J]. J. Semicond., 2008, 29(9): 1682.

      An Enhancement-Mode AlGaN/GaN HEMT with Recessed-Gate

      • Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

      Funds:

      國家自然科學(xué)基金

      • Received Date: 2015-08-18
      • Accepted Date: 2008-03-14
      • Revised Date: 2008-04-09
      • Published Date: 2008-09-03

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