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J. Semicond. > 2008, Volume 29?>?Issue 3?> 442-446

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The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si

Song Jianjun, Zhang Heming, Shu Bin, Hu Huiyong and Dai Xianying

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Abstract: Based on an analysis of symmetry,the dispersion relations near the Δi valley in strained Si1-xGex(0≤x＜0.45)/(001),(111),(101)Si are derived using the KP method with perturbation theory.These relations demonstrate that Δi levels in strained Si1-xGex are different from the Δ1 level in relaxed Si1-xGex,while the longitudinal and transverse masses (m*l and m*t) are unchanged under strain.The energy shift between the Δi levels and the Δ1 level follows the linear deformation potential theory.Finally,a description of the conduction band (CB) edge in biaxially strained layers is given.

Key words: KP method, conduction band, strained SiGe

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    Received: 18 August 2015 Revised: 20 September 2007 Online: Published: 01 March 2008

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      Song Jianjun, Zhang Heming, Shu Bin, Hu Huiyong, Dai Xianying. The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si[J]. Journal of Semiconductors, 2008, 29(3): 442-446. ****Song J J, Zhang H M, Shu B, Hu H Y, Dai X Y. The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si[J]. J. Semicond., 2008, 29(3): 442.
      Citation:
      Song Jianjun, Zhang Heming, Shu Bin, Hu Huiyong, Dai Xianying. The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si[J]. Journal of Semiconductors, 2008, 29(3): 442-446. ****
      Song J J, Zhang H M, Shu B, Hu H Y, Dai X Y. The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si[J]. J. Semicond., 2008, 29(3): 442.

      The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-04-24
      • Revised Date: 2007-09-20
      • Published Date: 2008-02-28

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