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J. Semicond. > 2008, Volume 29?>?Issue 10?> 1864-1867

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An 8~20GHz Monolithic SPDT GaAs pin Diode Switch

Wu Rufei, Yin Junjian, Liu Huidong and Zhang Haiying

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Abstract: Monolithic GaAs pin diode single pole double throw (SPDT) switches based on the fabrication technology of IMECAS are designed,fabricated,and tested.These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB,and input and output return losses over 10dB from 8 to 20GHz.The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm.These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.

Key words: X/Ku-band, SPDT, switches, GaAs, pin diodes

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    Received: 18 August 2015 Revised: 12 June 2008 Online: Published: 01 October 2008

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      Wu Rufei, Yin Junjian, Liu Huidong, Zhang Haiying. An 8~20GHz Monolithic SPDT GaAs pin Diode Switch[J]. Journal of Semiconductors, 2008, 29(10): 1864-1867. ****Wu R F, Yin J J, Liu H D, Zhang H Y. An 8~20GHz Monolithic SPDT GaAs pin Diode Switch[J]. J. Semicond., 2008, 29(10): 1864.
      Citation:
      Wu Rufei, Yin Junjian, Liu Huidong, Zhang Haiying. An 8~20GHz Monolithic SPDT GaAs pin Diode Switch[J]. Journal of Semiconductors, 2008, 29(10): 1864-1867. ****
      Wu R F, Yin J J, Liu H D, Zhang H Y. An 8~20GHz Monolithic SPDT GaAs pin Diode Switch[J]. J. Semicond., 2008, 29(10): 1864.

      An 8~20GHz Monolithic SPDT GaAs pin Diode Switch

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-29
      • Revised Date: 2008-06-12
      • Published Date: 2008-11-11

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