Chin. J. Semicond. > 2007, Volume 28?>?Issue 8?> 1262-1266

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Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure

Duan Baoxing, Huang Yongguang, Zhang Bo and Li Zhaoji

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Abstract: The results of an experiment on REBULF LDMOS are analyzed.The increased leakage current is due to the n+-floating layer,as proved by the test results of breakdown voltage.However,the breakdown voltage decreases as a result of the leakage current of the n+p junction being exposed to the surface.In order to resolve this problem,a REBULF LDMOS with a partial n+-floating layer is proposed for the first time.An effective REBULF is obtained using this structure,and the large leakage current of Ref.［10］ is eliminated by an inner n+p junction around the source.The results show that the breakdown voltage is increased by 60% in comparison with traditional RESURF LDMOS.

Key words: LDMOS, n+-floating layer, effect of REBULF, breakdown voltage

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    Received: 18 August 2015 Revised: 10 March 2007 Online: Published: 01 August 2007

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      Duan Baoxing, Huang Yongguang, Zhang Bo, Li Zhaoji. Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J]. Journal of Semiconductors, 2007, 28(8): 1262-1266. ****Duan B X, Huang Y G, Zhang B, Li Z J. Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J]. Chin. J. Semicond., 2007, 28(8): 1262.
      Citation:
      Duan Baoxing, Huang Yongguang, Zhang Bo, Li Zhaoji. Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J]. Journal of Semiconductors, 2007, 28(8): 1262-1266. ****
      Duan B X, Huang Y G, Zhang B, Li Z J. Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J]. Chin. J. Semicond., 2007, 28(8): 1262.

      Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-17
      • Revised Date: 2007-03-10
      • Published Date: 2007-08-08

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