Chin. J. Semicond. > 2007, Volume 28?>?Issue 9?> 1465-1470

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Simulation of SU-8 Photoresist Profile in Deep UV Lithography

Feng Ming, Huang Qing’an, Li Weihua, Zhou Zaifa and Zhu Zhen

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Abstract: A new simulation method is proposed which considers diffraction,reflection,refraction,energy loss,absorption coefficient change,post-bake,and development.Compared with previous simulation methods,the present results show good agreement with experimental results.This shows that the simulation accuracy is increased.It is useful for the research of SU-8 phoptoresist deep UV lithography processes and micro-electro-mechanical system design.

Key words: SU-8 photoresist, lithography simulation, development profile

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    Received: 18 August 2015 Revised: 24 April 2007 Online: Published: 01 September 2007

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      Feng Ming, Huang Qing’an, Li Weihua, Zhou Zaifa, Zhu Zhen. Simulation of SU-8 Photoresist Profile in Deep UV Lithography[J]. Journal of Semiconductors, 2007, 28(9): 1465-1470. ****Feng M, Huang Q, Li W H, Zhou Z F, Zhu Z. Simulation of SU-8 Photoresist Profile in Deep UV Lithography[J]. Chin. J. Semicond., 2007, 28(9): 1465.
      Citation:
      Feng Ming, Huang Qing’an, Li Weihua, Zhou Zaifa, Zhu Zhen. Simulation of SU-8 Photoresist Profile in Deep UV Lithography[J]. Journal of Semiconductors, 2007, 28(9): 1465-1470. ****
      Feng M, Huang Q, Li W H, Zhou Z F, Zhu Z. Simulation of SU-8 Photoresist Profile in Deep UV Lithography[J]. Chin. J. Semicond., 2007, 28(9): 1465.

      Simulation of SU-8 Photoresist Profile in Deep UV Lithography

      • Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China

      • Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China

      • Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China

      • Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China

      • Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-07
      • Revised Date: 2007-04-24
      • Published Date: 2007-08-31

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