PAPERS
Yu Changliang, Mao Luhong, Song Ruiliang, Zhu Haobo, Wang Rui and Wang Qian
Abstract: A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=1e-12.
Key words: photo-detector, optoelectronic integrated receiver, CMOS, active inductor
Article views: 4303 Times PDF downloads: 1826 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 05 April 2007 Online: Published: 01 August 2007
| Citation: |
Yu Changliang, Mao Luhong, Song Ruiliang, Zhu Haobo, Wang Rui, Wang Qian. Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process[J]. Journal of Semiconductors, 2007, 28(8): 1198-1203.
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Yu C L, Mao L H, Song R L, Zhu H B, Wang R, Wang Q. Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process[J]. Chin. J. Semicond., 2007, 28(8): 1198.
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