Chin. J. Semicond. > 2007, Volume 28?>?Issue 5?> 645-650

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High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm

Li Jing, Ma Xiaoyu and Liu Yuanyuan

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Abstract: High-power ridge-waveguide tapered InGaAs-AlGaAs lasers emitting at 980nm were fabricated.Lasers with a total length L=1850μm and different lengths of the ridge waveguide Lrw were processed to study the influence of the straight section on the spatial mode filtering.When Lrw is 450μm,the devices have the optimized maximum output power and beam quality,and the output power P is 4.28W.The beam propagation ratio M2 is 3.79 at 1W.

Key words: tapered, ridge-waveguide, 980nm, beam propagation factor

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    Received: 18 August 2015 Revised: 07 November 2006 Online: Published: 01 May 2007

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      Li Jing, Ma Xiaoyu, Liu Yuanyuan. High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm[J]. Journal of Semiconductors, 2007, 28(5): 645-650. ****Li J, Ma X Y, Liu Y Y. High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm[J]. Chin. J. Semicond., 2007, 28(5): 645.
      Citation:
      Li Jing, Ma Xiaoyu, Liu Yuanyuan. High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm[J]. Journal of Semiconductors, 2007, 28(5): 645-650. ****
      Li J, Ma X Y, Liu Y Y. High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm[J]. Chin. J. Semicond., 2007, 28(5): 645.

      High-Power Ridge-Waveguide Tapered Diode Lasers at 980nm

      • National Engineering Research Center for Opto-Electronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • National Engineering Research Center for Opto-Electronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • National Engineering Research Center for Opto-Electronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-10-10
      • Revised Date: 2006-11-07
      • Published Date: 2007-04-29

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