Chin. J. Semicond. > 1994, Volume 15?>?Issue 11?> 759-761

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Abstract:

在Ｓｉ（００１）－２×１表面上沉積堿金屬Ｋ，接著在室溫下吸附一定量的Ｈ２Ｏ，光電子譜證明：Ｋ的存在有促進Ｈ２Ｏ分解和使Ｓｉ氧化的作用．但其作用是局域在Ｋ原子附近的．

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1994

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      李海洋，范朝陽，徐亞伯. K對H2O在Si（001）表面上吸附的影響[J]. 半導體學報(英文版), 1994, 15(11): 759-761.
      Citation:
      李海洋，范朝陽，徐亞伯. K對H2O在Si（001）表面上吸附的影響[J]. 半導體學報(英文版), 1994, 15(11): 759-761.

      • Received Date: 2015-08-19

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