J. Semicond. > 2008, Volume 29?>?Issue 12?> 2412-2416

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Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers

Feng Yuan, Zhong Jingchang, Hao Yongqin, Zhao Yingjie, Hou Lifeng and Yao Yanping

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Abstract: This research is based on the selective oxidation experiments under different conditions,in which the microstructure pictures and the component contents of the produced oxide in different depths are obtained.The oxidation rate is mainly controlled by diffusion;therefore,the experimental results are analyzed with the kinetics of thermal diffusion.It shows that the results of mathematical derivation are basically in agreement with the experimental results.Thus it is concluded that the concentration of oxidant is exponentially declined as the depth of oxidation in vertical cavity surface emitting lasers increases.

Key words: VCSEL, selective oxidation, oxidation rate, diffusion rate

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    Received: 18 August 2015 Revised: 20 August 2008 Online: Published: 01 December 2008

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      Feng Yuan, Zhong Jingchang, Hao Yongqin, Zhao Yingjie, Hou Lifeng, Yao Yanping. Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers[J]. Journal of Semiconductors, 2008, 29(12): 2412-2416. ****Feng Y, Zhong J C, Hao Y Q, Zhao Y J, Hou L F, Yao Y P. Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers[J]. J. Semicond., 2008, 29(12): 2412.
      Citation:
      Feng Yuan, Zhong Jingchang, Hao Yongqin, Zhao Yingjie, Hou Lifeng, Yao Yanping. Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers[J]. Journal of Semiconductors, 2008, 29(12): 2412-2416. ****
      Feng Y, Zhong J C, Hao Y Q, Zhao Y J, Hou L F, Yao Y P. Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers[J]. J. Semicond., 2008, 29(12): 2412.

      Rule of Oxidation Rate in Vertical Cavity Surface Emitting Lasers

      • National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • National Key Laboratory of High-Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-02
      • Revised Date: 2008-08-20
      • Published Date: 2008-12-09

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