Abstract: In order to understand the damage mechanism of the wafer rotation ground surface layer,this paper analyzes the ground damage characteristic with the aid of TEM.The results show that rough ground wafer surface layer damage is composed of a large quantity of microcracks and high density dislocations.Apart from the microcracks and dislocations,amorphous silicon and polycrystalline silicon (Si-I phase and Si-III phase) exist in the semi-fine and fine ground wafer surface layer damage.From rough grinding to semi-fine grinding,the amorphous layer depth increases from about 0 to about 110nm.From semi-fine grinding to fine grinding,the amorphous layer depth decreases from about 110 to about 30nm and the amorphous layer depth becomes uniform.From rough grinding to fine grinding,the subsurface damage depth,the depth of the microcracks,and the dislocation glide decrease gradually.From rough grinding to fine grinding,the material removal mode gradually changes from micro-fracture mode to ductile mode.

Key words: monocrystalline silicon wafers, grinding, damage, TEM observation