Abstract: We describe a new lateral double diffused trench gate MOSFET with double RESURF technology for the first time.We simulate the breakdown voltage and capacitance,especially the influences of double RESURF technology on the breakdown voltage.Compared with conventional TG-LDMOS,the breakdown voltage of the new structure is improved by 30V with the same length of the drift region and on-state resistance,and the structure shows excellent RF characteristics.

Key words: LDMOS, RESURF, simulation, breakdown voltage, capacitance