Chin. J. Semicond. > 2007, Volume 28?>?Issue 10?> 1652-1655

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A Second Single-Probe Traversal Optimization for MCM Substrate

Xu Ruqing, Dong Gang, Huang Weiwei and Yang Yintang

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Abstract: For the single-probe technology used to test MCM substrate,this paper presents a second single-probe traversal optimization approach based on a simulated annealing algorithm. Compared with previous heuristic algorithms,significant improvements are achieved using the proposed algorithm,and test cost is reduced dramatically by 90.2%.

Key words: single probe test, simulated annealing algorithm, second optimization

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    Received: 18 August 2015 Revised: 21 May 2007 Online: Published: 01 October 2007

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      Xu Ruqing, Dong Gang, Huang Weiwei, Yang Yintang. A Second Single-Probe Traversal Optimization for MCM Substrate[J]. Journal of Semiconductors, 2007, 28(10): 1652-1655. ****Xu R Q, Dong G, Huang W W, Yang Y T. A Second Single-Probe Traversal Optimization for MCM Substrate[J]. Chin. J. Semicond., 2007, 28(10): 1652.
      Citation:
      Xu Ruqing, Dong Gang, Huang Weiwei, Yang Yintang. A Second Single-Probe Traversal Optimization for MCM Substrate[J]. Journal of Semiconductors, 2007, 28(10): 1652-1655. ****
      Xu R Q, Dong G, Huang W W, Yang Y T. A Second Single-Probe Traversal Optimization for MCM Substrate[J]. Chin. J. Semicond., 2007, 28(10): 1652.

      A Second Single-Probe Traversal Optimization for MCM Substrate

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Department of Advanced Research,CETC,Beijing 100846,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      Funds:

      國家自然科學基金(60606006)

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-23
      • Revised Date: 2007-05-21
      • Published Date: 2007-09-26

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