J. Semicond. > 2008, Volume 29?>?Issue 12?> 2376-2380

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Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature

Wang Wenyan, Qin Fuwen, Wu Aimin, Song Shiwei, Liu Ruixian, Jiang Xin, Xu Yin and Gu Biao

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Abstract: High c-axis oriented GaN films have been deposited on corning 7101 glass substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at low temperature.Influences of N2 flow rate on the crystalline characteristics of the GaN films were investigated by reflection high energy electron diffraction (RHEED) in situ and X-ray diffraction (XRD).And the surface morphology and the optical properties of the GaN film were studied using atomic force microscope (AFM) and room temperature photoluminescence (PL) spectra.The results show that the surface morphology of the GaN film is smooth and its optical peaks are composed of a stronger ultraviolet near band emission and a rather weak green emission.

Key words: ECR-PEMOCVD, GaN, low-temperature deposition, glass substrates

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    Received: 18 August 2015 Revised: 11 August 2008 Online: Published: 01 December 2008

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      Wang Wenyan, Qin Fuwen, Wu Aimin, Song Shiwei, Liu Ruixian, Jiang Xin, Xu Yin, Gu Biao. Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature[J]. Journal of Semiconductors, 2008, 29(12): 2376-2380. ****Wang W Y, Qin F W, Wu A M, Song S W, Liu R X, Jiang X, Xu Y, Gu B. Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature[J]. J. Semicond., 2008, 29(12): 2376.
      Citation:
      Wang Wenyan, Qin Fuwen, Wu Aimin, Song Shiwei, Liu Ruixian, Jiang Xin, Xu Yin, Gu Biao. Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature[J]. Journal of Semiconductors, 2008, 29(12): 2376-2380. ****
      Wang W Y, Qin F W, Wu A M, Song S W, Liu R X, Jiang X, Xu Y, Gu B. Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature[J]. J. Semicond., 2008, 29(12): 2376.

      Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • State Key Laboratory of Materials by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-25
      • Revised Date: 2008-08-11
      • Published Date: 2008-12-09

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