香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 5?> 863-868

PAPERS

An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs

Li Xiaojian, Tan Yaohua and Tian Lilin

+ Author Affiliations

PDF

Abstract: An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper.The model deals directly with the strain tensor,and thus is independent of the manufacturing process.It is suitable for 〈100〉/〈110〉 channel nMOSFETs under biaxial or 〈100〉/〈110〉 uniaxial stress and can be implemented in conventional device simulation tools.

Key words: Strained-Si, electron mobility, analytical model, nMOSFET, uniaxial stress/strain

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3755 Times PDF downloads: 1056 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 09 January 2008 Online: Published: 01 May 2008

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Li Xiaojian, Tan Yaohua, Tian Lilin. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. Journal of Semiconductors, 2008, 29(5): 863-868. ****Li X J, Tan Y H, Tian L L. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. J. Semicond., 2008, 29(5): 863.
      Citation:
      Li Xiaojian, Tan Yaohua, Tian Lilin. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. Journal of Semiconductors, 2008, 29(5): 863-868. ****
      Li X J, Tan Y H, Tian L L. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. J. Semicond., 2008, 29(5): 863.

      An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-26
      • Revised Date: 2008-01-09
      • Published Date: 2008-05-05

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return