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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1326-1329

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Dynamics of Carriers in ZnSeTe/ZnTe Multiple Quantum Wells

Jin Hua, Liu Shu, Zhang Ligong, Zheng Zhuhong and Shen Dezhen

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Abstract: The generation,relaxation,and recombination of hot carriers in ZnSeTe/ZnTe type II multiple quantum well (MQW) structures are investigated using photoluminescence (PL) spectra and the femtosecond pulse pump-probe technique.The generation of hot carriers in barrier layers and well layers is observed by time-resolved differential transmission spectra.The cooling time of hot carriers in ZnTe layers is about 10ps.Carrier capturing from the ZnTe barrier layer to the ZnSeTe well layer is also in the time scale of 10ps.

Key words: ZnSeTe/ZnTe multiple quantum wells, hot carriers, pump-probe technique

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    Received: 18 August 2015 Revised: 29 January 2008 Online: Published: 01 July 2008

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      Jin Hua, Liu Shu, Zhang Ligong, Zheng Zhuhong, Shen Dezhen. Dynamics of Carriers in ZnSeTe/ZnTe Multiple Quantum Wells[J]. Journal of Semiconductors, 2008, 29(7): 1326-1329. ****Jin H, Liu S, Zhang L G, Zheng Z H, Shen D Z. Dynamics of Carriers in ZnSeTe/ZnTe Multiple Quantum Wells[J]. J. Semicond., 2008, 29(7): 1326.
      Citation:
      Jin Hua, Liu Shu, Zhang Ligong, Zheng Zhuhong, Shen Dezhen. Dynamics of Carriers in ZnSeTe/ZnTe Multiple Quantum Wells[J]. Journal of Semiconductors, 2008, 29(7): 1326-1329. ****
      Jin H, Liu S, Zhang L G, Zheng Z H, Shen D Z. Dynamics of Carriers in ZnSeTe/ZnTe Multiple Quantum Wells[J]. J. Semicond., 2008, 29(7): 1326.

      Dynamics of Carriers in ZnSeTe/ZnTe Multiple Quantum Wells

      • Security and Prevention Department,Chinese People’s Public Security University,Beijing 102416,China

      • Security and Prevention Department,Chinese People’s Public Security University,Beijing 102416,China

      • Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

      • Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

      • Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-03
      • Revised Date: 2008-01-29
      • Published Date: 2008-08-01

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