Chin. J. Semicond. > 1995, Volume 16?>?Issue 5?> 339-343

CONTENTS

用GSMBE法生長匹配型GaInAsP／InP材料及量子阱、面發射激光器結構的研究

林世鳴

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2449 Times PDF downloads: 1354 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 1995

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      林世鳴. 用GSMBE法生長匹配型GaInAsP／InP材料及量子阱、面發射激光器結構的研究[J]. 半導體學報(英文版), 1995, 16(5): 339-343.
      Citation:
      林世鳴. 用GSMBE法生長匹配型GaInAsP／InP材料及量子阱、面發射激光器結構的研究[J]. 半導體學報(英文版), 1995, 16(5): 339-343.

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return