Chin. J. Semicond. > 1996, Volume 17?>?Issue 1?> 41-50

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      馬平西，張利春，趙寶瑛，王陽元. 多晶／單晶界面參數對發射區渡越時間影響的解析模型[J]. 半導體學報(英文版), 1996, 17(1): 41-50.
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      馬平西，張利春，趙寶瑛，王陽元. 多晶／單晶界面參數對發射區渡越時間影響的解析模型[J]. 半導體學報(英文版), 1996, 17(1): 41-50.

      • Received Date: 2015-08-18

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