Abstract: A novel approximation of the two-dimensional (2D) potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.The model agrees well with numerical simulation by MEDICI.The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted (FD) SOI devices in practice.

Key words: fully depleted SOI-MOSFET, non-uniform, surface potential, threshold voltage