PAPERS
Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping and Wang Liangchen
Abstract: Resonant tunneling diodes (RTDs) with different barrier thicknesses were grown by molecular beam epitaxy (MBE) on semi-insulating InP substrates.The highest peak-to-valley current ratio is 18.39 at room temperature.The relationship between RTD direct current characteristics with barrier thickness,well and sub-well thickness,spacer thickness,and doping density are analyzed and discussed.
Key words: resonant tunneling diodes, peak-to-valley current ratio, current-voltage characteristics, device simulation
Article views: 3314 Times PDF downloads: 1351 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 08 November 2006 Online: Published: 01 April 2007
| Citation: |
Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping, Wang Liangchen. Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates[J]. Journal of Semiconductors, 2007, 28(4): 563-566.
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Ma L, Zhang Y, Dai Y, Yang F H, Zeng Y P, Wang L C. Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates[J]. Chin. J. Semicond., 2007, 28(4): 563.
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