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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1242-1245

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Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

Ma Zhifang, Wang Yutian, Jiang Desheng, Zhao Degang, Zhang Shuming, Zhu Jianjun, Liu Zongshun, Sun Baojuan, Duan Ruifei, Yang Hui and Liang Junwu

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Abstract: High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate.The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases.Meanwhile,the mean radius of these defect clusters shows a reverse tendency.This result is explained by the effect of clusters preferentially forming around dislocations,which act as effective sinks for the segregation of point defects.The electric mobility is found to decrease as the cluster concentration increases.

Key words: X-ray diffuse scattering, GaN, defect cluster

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    Received: 18 August 2015 Revised: 19 March 2008 Online: Published: 01 July 2008

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      Ma Zhifang, Wang Yutian, Jiang Desheng, Zhao Degang, Zhang Shuming, Zhu Jianjun, Liu Zongshun, Sun Baojuan, Duan Ruifei, Yang Hui, Liang Junwu. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. Journal of Semiconductors, 2008, 29(7): 1242-1245. ****Ma Z F, Wang Y T, Jiang D S, Zhao D G, Zhang S M, Zhu J J, Liu Z S, Sun B J, Duan R F, Yang H, Liang J W. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. J. Semicond., 2008, 29(7): 1242.
      Citation:
      Ma Zhifang, Wang Yutian, Jiang Desheng, Zhao Degang, Zhang Shuming, Zhu Jianjun, Liu Zongshun, Sun Baojuan, Duan Ruifei, Yang Hui, Liang Junwu. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. Journal of Semiconductors, 2008, 29(7): 1242-1245. ****
      Ma Z F, Wang Y T, Jiang D S, Zhao D G, Zhang S M, Zhu J J, Liu Z S, Sun B J, Duan R F, Yang H, Liang J W. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. J. Semicond., 2008, 29(7): 1242.

      Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-02-29
      • Revised Date: 2008-03-19
      • Published Date: 2008-08-01

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