Abstract: This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes (SBDs).The ideality factor n=1.08 and effective Schottky barrier height φ=1.05eV of the SBDs were measured with the method of forward current density-voltage (J-V).A low reverse leakage current below 5.96e-3A/cm2 at a bias voltage of -1.1kV was obtained.By using B+ implantation,an amorphous layer as the edge termination was formed.We used the PECVD SiO2 as the field plate dielectric.The SBDs have an on-state current density of 430A/cm2 at a forward voltage drop of about 4V.The specific on-resistance Ron was found to be 6.77mΩ·cm2.

Key words: 4H-SiC,  Schottky barrier,  ideal factor,  barrier height,  implantation