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J. Semicond. > 2008, Volume 29?>?Issue 5?> 980-983

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RF Bias Voltage in ICP Etch Systems

Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing, Zhu Xiaoli and Chen Baoqin

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Abstract: In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.The results indicated that the relationship varies depending on the other parameters' variation.The upper electrode RF power,the bottom electrode RF power,and gas pressure all distinctly affect this relationship.

Key words: plasma,  RF bias voltage,  ICP,  dry etch

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    Received: 18 August 2015 Revised: 09 November 2007 Online: Published: 01 May 2008

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      Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing, Zhu Xiaoli, Chen Baoqin. RF Bias Voltage in ICP Etch Systems[J]. Journal of Semiconductors, 2008, 29(5): 980-983. ****Zhang Q Z, Xie C Q, Liu M, Li B, Zhu X L, Chen B Q. RF Bias Voltage in ICP Etch Systems[J]. J. Semicond., 2008, 29(5): 980.
      Citation:
      Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing, Zhu Xiaoli, Chen Baoqin. RF Bias Voltage in ICP Etch Systems[J]. Journal of Semiconductors, 2008, 29(5): 980-983. ****
      Zhang Q Z, Xie C Q, Liu M, Li B, Zhu X L, Chen B Q. RF Bias Voltage in ICP Etch Systems[J]. J. Semicond., 2008, 29(5): 980.

      RF Bias Voltage in ICP Etch Systems

      • Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-08
      • Revised Date: 2007-11-09
      • Published Date: 2008-05-05

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