香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 6?> 1070-1074

PAPERS

Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs

Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun and Zheng Xuejun

+ Author Affiliations

PDF

Abstract: Asymmetric doping channel (AC) partially depleted (PD) silicon-on-insulator (SOI) devices are simulated using two-dimensional simulation software.The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail.Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices.Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications.The AC FD SOI device has thinner silicon film,which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.

Key words: AC PD SOI MOSFETs, output characteristics, breakdown voltage

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3757 Times PDF downloads: 1105 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 03 January 2008 Online: Published: 01 June 2008

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun, Zheng Xuejun. Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2008, 29(6): 1070-1074. ****Tang J X, Tang M H, Yang F, Zhang J J, Zhou Y C, Zheng X J. Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs[J]. J. Semicond., 2008, 29(6): 1070.
      Citation:
      Tang Junxiong, Tang Minghua, Yang Feng, Zhang Junjie, Zhou Yichun, Zheng Xuejun. Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs[J]. Journal of Semiconductors, 2008, 29(6): 1070-1074. ****
      Tang J X, Tang M H, Yang F, Zhang J J, Zhou Y C, Zheng X J. Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs[J]. J. Semicond., 2008, 29(6): 1070.

      Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs

      • Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University),Ministry of Education,Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University),Ministry of Education,Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University),Ministry of Education,Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University),Ministry of Education,Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University),Ministry of Education,Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105,China

      • Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University),Ministry of Education,Faculty of Materials,Optoelectronics and Physics,Xiangtan University,Xiangtan 411105,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-20
      • Revised Date: 2008-01-03
      • Published Date: 2008-06-05

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return