Abstract: The first domestic total dose hardened 2μm partially depleted silicon-on-insulator (PDSOI) CMOS 3-line to 8-line decoder fabricated in SIMOX is demonstrated.The radiation performance is characterized by transistor threshold voltage shifts,circuit static leakage currents,and I-V curves as a function of total dose up to 3E5rad(Si).The worst case threshold voltage shifts of the front channels are less than 20mV for nMOS transistors at 3E5rad(Si) and follow-up irradiation and less than 70mV for the pMOS transistors.Furthermore,no significant radiation induced leakage currents and functional degeneration are observed.

Key words: PDSOI, decoder, total dose, radiation