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J. Semicond. > 2024, Volume 45?>?Issue 2?> 022101

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Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers

Karolis Sta?ys, Andrejus Gei?utis and Jan Devenson

+ Author Affiliations + Find other works by these authors

• State Research Institute Center for Physical Sciences and Technology, Savanori? ave. 231, LT-02300 Vilnius, LithuaniaState Research Institute Center for Physical Sciences and Technology, Savanori? ave. 231, LT-02300 Vilnius, Lithuania

Author Bio:

• Karolis Sta?ys got his MSc degree from Vilnius University in 2014. Now he is a PhD student at State research institute Center for Physical Sciences and Technology under the supervision of Assoc. Prof. Jan Devenson. His research focuses on development of emitters and detectors for mid infrared range using molecular beam epitaxy.

• Karolis Sta?ys
• Andrejus Gei?utis
• Jan Devenson

 Corresponding author: Karolis Sta?ys, karolis.stasys@ftmc.lt

DOI: 10.1088/1674-4926/45/2/022101

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Abstract: We introduce a novel method to create mid-infrared (MIR) thermal emitters using fully epitaxial, metal-free structures. Through the strategic use of epsilon-near-zero (ENZ) thin films in InAs layers, we achieve a narrow-band, wide-angle, and p-polarized thermal emission spectra. This approach, employing molecular beam epitaxy, circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths. Our findings contribute a promising route towards simpler, more efficient MIR optoelectronic devices.

Key words: epsilon-near-zero, thermal emitters, indium arsenide, LWIR (long wave infraRed), molecular beam epitaxy

References

[1]	Willer U, Saraji M, Khorsandi A, et al. Near- and mid-infrared laser monitoring of industrial processes, environment and security applications. Opt Lasers Eng, 2006, 44, 699 doi: 10.1016/j.optlaseng.2005.04.015
[2]	Faist J, Capasso F, Sivco D L, et al. Quantum cascade laser. Science, 1994, 264, 553 doi: 10.1126/science.264.5158.553
[3]	Liu X X, Li Z W, Wen Z J, et al. Large-area, lithography-free, narrow-band and highly directional thermal emitter. Nanoscale, 2019, 11, 19742 doi: 10.1039/C9NR06181A
[4]	Lu G Y, Nolen J R, Folland T G, et al. Narrowband polaritonic thermal emitters driven by waste heat. ACS Omega, 2020, 5, 10900 doi: 10.1021/acsomega.0c00600
[5]	Wu J Y, Xie Z T, Sha Y H, et al. Epsilon-near-zero photonics: Infinite potentials. Photon Res, 2021, 9, 1616 doi: 10.1364/PRJ.427246
[6]	Jun Y C, Luk T S, Robert Ellis A, et al. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. Appl Phys Lett, 2014, 105, 13 doi: 10.1063/1.4896573
[7]	Hwang J S, Xu J, Raman A P. Simultaneous control of spectral and directional emissivity with gradient epsilon-near-zero InAs photonic structures. Adv Mater, 2023, 35, 2302956 doi: 10.1002/adma.202302956
[8]	Argyropoulos C, Le K Q, Mattiucci N, et al. Broadband absorbers and selective emitters based on plasmonic Brewster metasurfaces. Phys Rev B, 2013, 87, 205112 doi: 10.1103/PhysRevB.87.205112
[9]	Law S, Liu R Y, Wasserman D. Doped semiconductors with band-edge plasma frequencies. J Vac Sci Technol B, 2014, 32, 325 doi: doi.org/10.1116/1.4891170
[10]	Liu M Q, Xia S, Wan W J, et al. Broadband mid-infrared non-reciprocal absorption using magnetized gradient epsilon-near-zero thin films. Nat Mater, 2023, 22, 1196 doi: 10.1038/s41563-023-01635-9
[11]	Shiba M, Ikariyama R, Takushima M, et al. Properties of low-temperature-grown InAs and their changes upon annealing. J Cryst Growth, 2007, 301/302, 256 doi: 10.1016/j.jcrysgro.2006.11.140
[12]	Ciattoni A, Marini A, Rizza C, et al. Polariton excitation in epsilon-near-zero slabs: Transient trapping of slow light. Phys Rev A, 2013, 87, 053853 doi: 10.1103/PhysRevA.87.053853

Fig. 1.  (Color online) Structure of samples grown using molecular beam epitaxy.

DownLoad: Full-Size Img PowerPoint

Fig. 2.  (Color online) Experimental setup for powering-up the epitaxial structures and measuring thermal emission.

DownLoad: Full-Size Img PowerPoint

Fig. 3.  (Color online) High-resolution X-ray diffraction rocking curves from samples VGS0055 (a) (grown on a GaSb substrate) and VIA0027 (b) (grown on an InAs substrate).

DownLoad: Full-Size Img PowerPoint

Fig. 4.  (Color online) Nomarski microscopy surface images of the samples VGS0055 (a) and VIA0027 (b). The scale bar at the bottom right represents 20 μm.

DownLoad: Full-Size Img PowerPoint

Fig. 5.  (Color online) Reflectance (black) and thermal emission (red) spectra measured on samples VGS0055 (a) and VIA0027 (b).

DownLoad: Full-Size Img PowerPoint

Fig. 6.  P-polarised emission intensity dependence on the sample orientation. 0 degrees position corresponds to the polarisation plate p-orientation along [001] direction. (a) Sample VIA0027, (b) sample VGS0055.

DownLoad: Full-Size Img PowerPoint

Fig. 7.  (Color online) Thermal emission spectra measured of both samples at different excitation temperatures. (a) Sample VIA0027, (b) sample VGS0055.

DownLoad: Full-Size Img PowerPoint

[1]	Willer U, Saraji M, Khorsandi A, et al. Near- and mid-infrared laser monitoring of industrial processes, environment and security applications. Opt Lasers Eng, 2006, 44, 699 doi: 10.1016/j.optlaseng.2005.04.015
[2]	Faist J, Capasso F, Sivco D L, et al. Quantum cascade laser. Science, 1994, 264, 553 doi: 10.1126/science.264.5158.553
[3]	Liu X X, Li Z W, Wen Z J, et al. Large-area, lithography-free, narrow-band and highly directional thermal emitter. Nanoscale, 2019, 11, 19742 doi: 10.1039/C9NR06181A
[4]	Lu G Y, Nolen J R, Folland T G, et al. Narrowband polaritonic thermal emitters driven by waste heat. ACS Omega, 2020, 5, 10900 doi: 10.1021/acsomega.0c00600
[5]	Wu J Y, Xie Z T, Sha Y H, et al. Epsilon-near-zero photonics: Infinite potentials. Photon Res, 2021, 9, 1616 doi: 10.1364/PRJ.427246
[6]	Jun Y C, Luk T S, Robert Ellis A, et al. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. Appl Phys Lett, 2014, 105, 13 doi: 10.1063/1.4896573
[7]	Hwang J S, Xu J, Raman A P. Simultaneous control of spectral and directional emissivity with gradient epsilon-near-zero InAs photonic structures. Adv Mater, 2023, 35, 2302956 doi: 10.1002/adma.202302956
[8]	Argyropoulos C, Le K Q, Mattiucci N, et al. Broadband absorbers and selective emitters based on plasmonic Brewster metasurfaces. Phys Rev B, 2013, 87, 205112 doi: 10.1103/PhysRevB.87.205112
[9]	Law S, Liu R Y, Wasserman D. Doped semiconductors with band-edge plasma frequencies. J Vac Sci Technol B, 2014, 32, 325 doi: doi.org/10.1116/1.4891170
[10]	Liu M Q, Xia S, Wan W J, et al. Broadband mid-infrared non-reciprocal absorption using magnetized gradient epsilon-near-zero thin films. Nat Mater, 2023, 22, 1196 doi: 10.1038/s41563-023-01635-9
[11]	Shiba M, Ikariyama R, Takushima M, et al. Properties of low-temperature-grown InAs and their changes upon annealing. J Cryst Growth, 2007, 301/302, 256 doi: 10.1016/j.jcrysgro.2006.11.140
[12]	Ciattoni A, Marini A, Rizza C, et al. Polariton excitation in epsilon-near-zero slabs: Transient trapping of slow light. Phys Rev A, 2013, 87, 053853 doi: 10.1103/PhysRevA.87.053853

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Received: 11 July 2023 Revised: 26 September 2023 Online: Accepted Manuscript: 13 November 2023Uncorrected proof: 08 December 2023Published: 10 February 2024

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Article Navigation >  Journal of Semiconductors  > 2024  >  45(2): 022101

Karolis Sta?ys, Andrejus Gei?utis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101 ****K Sta?ys, A Gei?utis, J Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. J. Semicond, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101

Citation:

Karolis Sta?ys, Andrejus Gei?utis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101 **** K Sta?ys, A Gei?utis, J Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. J. Semicond, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101

Karolis Sta?ys, Andrejus Gei?utis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101 ****K Sta?ys, A Gei?utis, J Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. J. Semicond, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101

Citation:

Karolis Sta?ys, Andrejus Gei?utis, Jan Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. Journal of Semiconductors, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101 **** K Sta?ys, A Gei?utis, J Devenson. Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers[J]. J. Semicond, 2024, 45(2): 022101. doi: 10.1088/1674-4926/45/2/022101

PDF( 3118 KB)

Enhanced thermal emission from metal-free, fully epitaxial structures with epsilon-near-zero InAs layers

DOI: 10.1088/1674-4926/45/2/022101

• Karolis Sta?ys , 
• Andrejus Gei?utis, 
• Jan Devenson

• State Research Institute Center for Physical Sciences and Technology, Savanori? ave. 231, LT-02300 Vilnius, Lithuania

More Information

• Karolis Sta?ys got his MSc degree from Vilnius University in 2014. Now he is a PhD student at State research institute Center for Physical Sciences and Technology under the supervision of Assoc. Prof. Jan Devenson. His research focuses on development of emitters and detectors for mid infrared range using molecular beam epitaxy
• Corresponding author: karolis.stasys@ftmc.lt
• Received Date: 2023-07-11
  
• Revised Date: 2023-09-26
Available Online: 2023-11-13

Abstract

• Abstract

  We introduce a novel method to create mid-infrared (MIR) thermal emitters using fully epitaxial, metal-free structures. Through the strategic use of epsilon-near-zero (ENZ) thin films in InAs layers, we achieve a narrow-band, wide-angle, and p-polarized thermal emission spectra. This approach, employing molecular beam epitaxy, circumvents the complexities associated with current layered structures and yields temperature-resistant emission wavelengths. Our findings contribute a promising route towards simpler, more efficient MIR optoelectronic devices.

   

  Keywords:
  • epsilon-near-zero, 
  • thermal emitters, 
  • indium arsenide, 
  • LWIR (long wave infraRed), 
  • molecular beam epitaxy
FullText(HTML)
References(12)

• References

  [1]	Willer U, Saraji M, Khorsandi A, et al. Near- and mid-infrared laser monitoring of industrial processes, environment and security applications. Opt Lasers Eng, 2006, 44, 699 doi: 10.1016/j.optlaseng.2005.04.015
  [2]	Faist J, Capasso F, Sivco D L, et al. Quantum cascade laser. Science, 1994, 264, 553 doi: 10.1126/science.264.5158.553
  [3]	Liu X X, Li Z W, Wen Z J, et al. Large-area, lithography-free, narrow-band and highly directional thermal emitter. Nanoscale, 2019, 11, 19742 doi: 10.1039/C9NR06181A
  [4]	Lu G Y, Nolen J R, Folland T G, et al. Narrowband polaritonic thermal emitters driven by waste heat. ACS Omega, 2020, 5, 10900 doi: 10.1021/acsomega.0c00600
  [5]	Wu J Y, Xie Z T, Sha Y H, et al. Epsilon-near-zero photonics: Infinite potentials. Photon Res, 2021, 9, 1616 doi: 10.1364/PRJ.427246
  [6]	Jun Y C, Luk T S, Robert Ellis A, et al. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. Appl Phys Lett, 2014, 105, 13 doi: 10.1063/1.4896573
  [7]	Hwang J S, Xu J, Raman A P. Simultaneous control of spectral and directional emissivity with gradient epsilon-near-zero InAs photonic structures. Adv Mater, 2023, 35, 2302956 doi: 10.1002/adma.202302956
  [8]	Argyropoulos C, Le K Q, Mattiucci N, et al. Broadband absorbers and selective emitters based on plasmonic Brewster metasurfaces. Phys Rev B, 2013, 87, 205112 doi: 10.1103/PhysRevB.87.205112
  [9]	Law S, Liu R Y, Wasserman D. Doped semiconductors with band-edge plasma frequencies. J Vac Sci Technol B, 2014, 32, 325 doi: doi.org/10.1116/1.4891170
  [10]	Liu M Q, Xia S, Wan W J, et al. Broadband mid-infrared non-reciprocal absorption using magnetized gradient epsilon-near-zero thin films. Nat Mater, 2023, 22, 1196 doi: 10.1038/s41563-023-01635-9
  [11]	Shiba M, Ikariyama R, Takushima M, et al. Properties of low-temperature-grown InAs and their changes upon annealing. J Cryst Growth, 2007, 301/302, 256 doi: 10.1016/j.jcrysgro.2006.11.140
  [12]	Ciattoni A, Marini A, Rizza C, et al. Polariton excitation in epsilon-near-zero slabs: Transient trapping of slow light. Phys Rev A, 2013, 87, 053853 doi: 10.1103/PhysRevA.87.053853

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• Fig. 1. (Color online) Structure of samples grown using molecular beam epitaxy.
• Fig. 2. (Color online) Experimental setup for powering-up the epitaxial structures and measuring thermal emission.
• Fig. 3. (Color online) High-resolution X-ray diffraction rocking curves from samples VGS0055 (a) (grown on a GaSb substrate) and VIA0027 (b) (grown on an InAs substrate).
• Fig. 4. (Color online) Nomarski microscopy surface images of the samples VGS0055 (a) and VIA0027 (b). The scale bar at the bottom right represents 20 μm.
• Fig. 5. (Color online) Reflectance (black) and thermal emission (red) spectra measured on samples VGS0055 (a) and VIA0027 (b).
• Fig. 6. P-polarised emission intensity dependence on the sample orientation. 0 degrees position corresponds to the polarisation plate p-orientation along [001] direction. (a) Sample VIA0027, (b) sample VGS0055.
• Fig. 7. (Color online) Thermal emission spectra measured of both samples at different excitation temperatures. (a) Sample VIA0027, (b) sample VGS0055.