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J. Semicond. > 2022, Volume 43?>?Issue 12?> 122101

ARTICLES

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Tieshi Wei1, 2, Xuefei Li1, , Zhiyun Li3, Wenxian Yang1, Yuanyuan Wu1, Zhiwei Xing1 and Shulong Lu1,

+ Author Affiliations

 Corresponding author: Xuefei Li, xfli2011@sinano.ac.cn; Shulong Lu, sllu2008@sinano.ac.cn

DOI: 10.1088/1674-4926/43/12/122101

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Abstract: The atomic structure and surface chemistry of GaP/Si(100) heterostructure with different pre-layers grown by molecular beam epitaxy are studied. It is found that GaP epilayer with Ga-riched pre-layers on Si(100) substrate has regular surface morphology and stoichiometric abrupt heterointerfaces from atomic force microscopes (AFMs) and spherical aberration-corrected transmission electron microscopes (ACTEMs). The interfacial dynamics of GaP/Si(100) heterostructure is investigated by X-ray photoelectron spectroscopy (XPS) equipped with an Ar gas cluster ion beam, indicating that Ga pre-layers can lower the interface formation energy and the bond that is formed is more stable. These results suggest that Ga-riched pre-layers are more conducive to the GaP nucleation as well as the epitaxial growth of GaP material on Si(100) substrate.

Key words: XPS, interfacial dynamics, GaP/Si(100) heterostructure, MBE



[1]
Boley A, Luna E, Zhang C, et al. Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures. J Cryst Growth, 2021, 562, 126059 doi: 10.1016/j.jcrysgro.2021.126059
[2]
Boyer J T, Blumer A N, Blumer Z H, et al. Reduced dislocation lntroduction in III–V/Si heterostructures with glide-enhancing compressively strained superlattices. Cryst Growth Des, 2020, 20, 6939 doi: 10.1021/acs.cgd.0c00992
[3]
Zhang C, Vadiee E, Dahal S, et al. Developing high performance GaP/Si heterojunction solar cells. J Vis Exp, 2018, 141, 58292 doi: 10.3791/58292
[4]
Gutowski P, Sankowska I, S?upinski T, et al. Optimization of MBE growth conditions of In0.52Al0.48As waveguide layers for InGaAs/InAlAs/InP quantum cascade lasers. Materials, 2019, 12, 1621 doi: 10.3390/ma12101621
[5]
Han Y, Ng W K, Xue Y, et al. Room temperature III–V nanolasers with distributed bragg reflectors epitaxially grown on (001) silicon-on-insulators. Photonics Res, 2019, 7, 1081 doi: 10.1364/PRJ.7.001081
[6]
Kawanami H. Heteroepitaxial technologies of III–V on Si. Sol Energy Mater Sol Cells, 2001, 66, 479 doi: 10.1016/S0927-0248(00)00209-9
[7]
Fang S F, Adomi K, Lyer S, et al. Gallium arsenide and other compound semiconductors on silicon. J Appl Phys, 1990, 68, R31 doi: 10.1063/1.346284
[8]
Supplie O, Romanyuk O, Koppka C, et al. Metalorganic vapor phase epitaxy of III–V-on-silicon: experiment and theory. Prog Cryst Growth Charact Mater, 2018, 64, 103 doi: 10.1016/j.pcrysgrow.2018.07.002
[9]
Feifel M, Ohlmann J, France R M, et al. Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers. J Cryst Growth, 2020, 532, 125422 doi: 10.1016/j.jcrysgro.2019.125422
[10]
Harrison W A, Kraut E A, Waldrop J R, et al. Polar heterojunction interfaces. Phys Rev B, 1978, 18, 4402 doi: 10.1103/PhysRevB.18.4402
[11]
Zhang C, Boley A, Faleev N, et al. Investigation of defect creation in GaP/Si(001) epitaxial structures. J Cryst Growth, 2018, 503, 36 doi: 10.1016/j.jcrysgro.2018.09.020
[12]
Grassman T J, Brenner M R, Rajagopalan S, et al. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy. Appl Phys Lett, 2009, 94, 232106 doi: 10.1063/1.3154548
[13]
Lucci I, Charbonnier S, Vallet M, et al. A stress-free and textured GaP template on silicon for solar water splitting. Adv Funct Mater, 2018, 28, 1801585 doi: 10.1002/adfm.201801585
[14]
Hool R D, Chai Y, Sun Y, et al. Relaxed GaP on Si with low threading dislocation density. Appl Phys Lett, 2020, 116, 042102 doi: 10.1063/1.5141122
[15]
Romanyuk O, Gordeev I, Paszuk A, et al. GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering. Appl Surf Sci, 2020, 514, 145903 doi: 10.1016/j.apsusc.2020.145903
[16]
Doscher H, Bruckner S, Dobrich A, et al. Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. J Cryst Growth, 2011, 315, 10 doi: 10.1016/j.jcrysgro.2010.07.017
[17]
Nandy M, Paszuk A, Feifel M, et al. A route to obtaining low-defect III–V epilayers on Si (100) utilizing MOCVD. Cryst Growth Des, 2021, 21, 5603 doi: 10.1021/acs.cgd.1c00410
[18]
D. Keith Bowen and Tanner. B K, High resolution X-ray diffractometry and topography. Abingdon, Taylor & Francis e-Library, 1998
[19]
Chadi D J. Stabilities of single-layer and bilayer steps on Si (001) surfaces. Phys Rev Lett, 1987, 59, 1691 doi: 10.1103/PhysRevLett.59.1691
[20]
Curson N J, Schofield S R, Simmons M Y, et al. STM characterization of the Si-P heterodimer. Phys Rev B, 2004, 69, 195303 doi: 10.1103/PhysRevB.69.195303
[21]
Brenner M R. GaP/Si heteroepitaxy (suppression of nucleation related defects). Ohio, The Ohio State University, 2009
[22]
Suzuki Y, Sanada N, Shimomura M, et al. High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)2S x solution. Appl Surf Sci, 2004, 235, 260 doi: 10.1016/j.apsusc.2004.05.099
[23]
Supplie O, May M M, Steinbach G, et al. Time-resolved in Situ spectroscopy during formation of the GaP/Si(100) heterointerface. J Phys Chem Lett, 2015, 6, 464 doi: 10.1021/jz502526e
[24]
Liu K Z, Suzuki Y, Fukuda Y. AES and XPS studies of a GaP(001) surface treated by S2Cl2 and P2S5/(NH4)2S x. Appl Surf Sci, 2004, 237, 627 doi: 10.1016/j.apsusc.2004.06.135
[25]
Beyer A, Stegmu?ller A, Oelerich J O, et al. Pyramidal structure formation at the lnterface between III/V semiconductors and silicon. Chem Mater, 2016, 28, 3265 doi: 10.1021/acs.chemmater.5b04896
[26]
Nagano M, Yamada S, Akita S, et al. Low-damage sputtering of GaAs and GaP using size-selected Ar cluster ion beams. Jpn J Appl Phys, 2005, 44, 164 doi: 10.1143/JJAP.44.L164
[27]
Romanyuk O, Hannappel T, Grosse F. Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory. Phys Rev B, 2013, 88, 115312 doi: 10.1103/PhysRevB.88.115312
[28]
Baira M, Bekhti-Siad A, Hebali K, et al. Charge compensation mechanisms in favor of the incorporation of the Eu3+ ion into the ZnO host lattice. Phys B, 2018, 537, 296 doi: 10.1016/j.physb.2018.02.035
[29]
Romanyuk O, Grosse F, Braun W. Stoichiometry and bravais lattice diversity: Anab initiostudy of the GaSb(001) surface. Phys Rev B, 2009, 79, 235330 doi: 10.1103/PhysRevB.79.235330
[30]
Doscher H, Supplie O, Bruckner S, et al. Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy. J Cryst Growth, 2011, 315, 16 doi: 10.1016/j.jcrysgro.2010.08.017
[31]
P Farin, H Eisele, D?hne M. From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si (001). J Phys D, 2021, 54, 205302 doi: 10.1088/1361-6463/abdff1
[32]
Volz K, Beyer A, Witte W, et al. GaP-nucleation on exact Si (001) substrates for III/V device integration. J Cryst Growth, 2011, 315, 37 doi: 10.1016/j.jcrysgro.2010.10.036
Fig. 1.  (Color online) Schematic illustration GaP/Si(100) heterostructure samples used in this work. (a) P-riched sample and (b) Ga-riched sample.

Fig. 2.  (Color online) (a) Triaxial HRXRD ω–2θ curves measured in the vicinity of Si (004) reflection for samples grown on Si substrates. AFM image (1 × 1 μm2) of GaP grown on the Si (100) substrate surface with (b) P-riched and (c) Ga-riched.

Fig. 3.  (Color online) Dependence of (a, b) P 2p and (c, d) Ga 3d core level spectra on sputtering depth as a function of binding energy.

Fig. 4.  (Color online) High-resolution spectra measured on non-sputtered (0 nm) GaP/Si (100) samples with Si substrate surface (a) Ga-riched and (b) P-riched. Fits contain Ga0 (blue), Ga–P (red) and Ga–O (green) components. It can be seen that there are a small amount of Ga–O bonds and Ga–Ga metal bonds on the GaP/Si surface.

Fig. 5.  (Color online) High-resolution spectra sputtered 26, 30 and 33 nm GaP/Si (100) samples with substrate (a–c) Ga-riched and (d–f) P-riched. Fits contain Ga0 (blue) and Ga–P (red) components.

Fig. 6.  (Color online) Variation of Ga 3d component Ga0 metal bond, Ga-P bond (a, b) binding energy, and (c, d) corresponding bonding bond concentration with sputtering depths when the surface of Si substrate surface is P-riched and Ga-riched atoms. (The blue solid line refers to the GaP/Si heterointerface, and the blue dotted line refers to the position of XPS measured by Ar ion sputtering.)

Fig. 7.  High-resolution cross-sectional TEM image of the interface of GaP epitaxial layer grown on Si (100) substrate surface with (a, b) P-riched or (c, d) Ga-riched.

[1]
Boley A, Luna E, Zhang C, et al. Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures. J Cryst Growth, 2021, 562, 126059 doi: 10.1016/j.jcrysgro.2021.126059
[2]
Boyer J T, Blumer A N, Blumer Z H, et al. Reduced dislocation lntroduction in III–V/Si heterostructures with glide-enhancing compressively strained superlattices. Cryst Growth Des, 2020, 20, 6939 doi: 10.1021/acs.cgd.0c00992
[3]
Zhang C, Vadiee E, Dahal S, et al. Developing high performance GaP/Si heterojunction solar cells. J Vis Exp, 2018, 141, 58292 doi: 10.3791/58292
[4]
Gutowski P, Sankowska I, S?upinski T, et al. Optimization of MBE growth conditions of In0.52Al0.48As waveguide layers for InGaAs/InAlAs/InP quantum cascade lasers. Materials, 2019, 12, 1621 doi: 10.3390/ma12101621
[5]
Han Y, Ng W K, Xue Y, et al. Room temperature III–V nanolasers with distributed bragg reflectors epitaxially grown on (001) silicon-on-insulators. Photonics Res, 2019, 7, 1081 doi: 10.1364/PRJ.7.001081
[6]
Kawanami H. Heteroepitaxial technologies of III–V on Si. Sol Energy Mater Sol Cells, 2001, 66, 479 doi: 10.1016/S0927-0248(00)00209-9
[7]
Fang S F, Adomi K, Lyer S, et al. Gallium arsenide and other compound semiconductors on silicon. J Appl Phys, 1990, 68, R31 doi: 10.1063/1.346284
[8]
Supplie O, Romanyuk O, Koppka C, et al. Metalorganic vapor phase epitaxy of III–V-on-silicon: experiment and theory. Prog Cryst Growth Charact Mater, 2018, 64, 103 doi: 10.1016/j.pcrysgrow.2018.07.002
[9]
Feifel M, Ohlmann J, France R M, et al. Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers. J Cryst Growth, 2020, 532, 125422 doi: 10.1016/j.jcrysgro.2019.125422
[10]
Harrison W A, Kraut E A, Waldrop J R, et al. Polar heterojunction interfaces. Phys Rev B, 1978, 18, 4402 doi: 10.1103/PhysRevB.18.4402
[11]
Zhang C, Boley A, Faleev N, et al. Investigation of defect creation in GaP/Si(001) epitaxial structures. J Cryst Growth, 2018, 503, 36 doi: 10.1016/j.jcrysgro.2018.09.020
[12]
Grassman T J, Brenner M R, Rajagopalan S, et al. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy. Appl Phys Lett, 2009, 94, 232106 doi: 10.1063/1.3154548
[13]
Lucci I, Charbonnier S, Vallet M, et al. A stress-free and textured GaP template on silicon for solar water splitting. Adv Funct Mater, 2018, 28, 1801585 doi: 10.1002/adfm.201801585
[14]
Hool R D, Chai Y, Sun Y, et al. Relaxed GaP on Si with low threading dislocation density. Appl Phys Lett, 2020, 116, 042102 doi: 10.1063/1.5141122
[15]
Romanyuk O, Gordeev I, Paszuk A, et al. GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering. Appl Surf Sci, 2020, 514, 145903 doi: 10.1016/j.apsusc.2020.145903
[16]
Doscher H, Bruckner S, Dobrich A, et al. Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment. J Cryst Growth, 2011, 315, 10 doi: 10.1016/j.jcrysgro.2010.07.017
[17]
Nandy M, Paszuk A, Feifel M, et al. A route to obtaining low-defect III–V epilayers on Si (100) utilizing MOCVD. Cryst Growth Des, 2021, 21, 5603 doi: 10.1021/acs.cgd.1c00410
[18]
D. Keith Bowen and Tanner. B K, High resolution X-ray diffractometry and topography. Abingdon, Taylor & Francis e-Library, 1998
[19]
Chadi D J. Stabilities of single-layer and bilayer steps on Si (001) surfaces. Phys Rev Lett, 1987, 59, 1691 doi: 10.1103/PhysRevLett.59.1691
[20]
Curson N J, Schofield S R, Simmons M Y, et al. STM characterization of the Si-P heterodimer. Phys Rev B, 2004, 69, 195303 doi: 10.1103/PhysRevB.69.195303
[21]
Brenner M R. GaP/Si heteroepitaxy (suppression of nucleation related defects). Ohio, The Ohio State University, 2009
[22]
Suzuki Y, Sanada N, Shimomura M, et al. High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)2S x solution. Appl Surf Sci, 2004, 235, 260 doi: 10.1016/j.apsusc.2004.05.099
[23]
Supplie O, May M M, Steinbach G, et al. Time-resolved in Situ spectroscopy during formation of the GaP/Si(100) heterointerface. J Phys Chem Lett, 2015, 6, 464 doi: 10.1021/jz502526e
[24]
Liu K Z, Suzuki Y, Fukuda Y. AES and XPS studies of a GaP(001) surface treated by S2Cl2 and P2S5/(NH4)2S x. Appl Surf Sci, 2004, 237, 627 doi: 10.1016/j.apsusc.2004.06.135
[25]
Beyer A, Stegmu?ller A, Oelerich J O, et al. Pyramidal structure formation at the lnterface between III/V semiconductors and silicon. Chem Mater, 2016, 28, 3265 doi: 10.1021/acs.chemmater.5b04896
[26]
Nagano M, Yamada S, Akita S, et al. Low-damage sputtering of GaAs and GaP using size-selected Ar cluster ion beams. Jpn J Appl Phys, 2005, 44, 164 doi: 10.1143/JJAP.44.L164
[27]
Romanyuk O, Hannappel T, Grosse F. Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory. Phys Rev B, 2013, 88, 115312 doi: 10.1103/PhysRevB.88.115312
[28]
Baira M, Bekhti-Siad A, Hebali K, et al. Charge compensation mechanisms in favor of the incorporation of the Eu3+ ion into the ZnO host lattice. Phys B, 2018, 537, 296 doi: 10.1016/j.physb.2018.02.035
[29]
Romanyuk O, Grosse F, Braun W. Stoichiometry and bravais lattice diversity: Anab initiostudy of the GaSb(001) surface. Phys Rev B, 2009, 79, 235330 doi: 10.1103/PhysRevB.79.235330
[30]
Doscher H, Supplie O, Bruckner S, et al. Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy. J Cryst Growth, 2011, 315, 16 doi: 10.1016/j.jcrysgro.2010.08.017
[31]
P Farin, H Eisele, D?hne M. From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si (001). J Phys D, 2021, 54, 205302 doi: 10.1088/1361-6463/abdff1
[32]
Volz K, Beyer A, Witte W, et al. GaP-nucleation on exact Si (001) substrates for III/V device integration. J Cryst Growth, 2011, 315, 37 doi: 10.1016/j.jcrysgro.2010.10.036

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    Received: 12 June 2022 Revised: 19 July 2022 Online: Accepted Manuscript: 08 September 2022Uncorrected proof: 08 September 2022Published: 02 December 2022

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      Tieshi Wei, Xuefei Li, Zhiyun Li, Wenxian Yang, Yuanyuan Wu, Zhiwei Xing, Shulong Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2022, 43(12): 122101. doi: 10.1088/1674-4926/43/12/122101 ****T S Wei, X F Li, Z Y Li, W X Yang, Y Y Wu, Z W Xing, S L Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. J. Semicond, 2022, 43(12): 122101. doi: 10.1088/1674-4926/43/12/122101
      Citation:
      Tieshi Wei, Xuefei Li, Zhiyun Li, Wenxian Yang, Yuanyuan Wu, Zhiwei Xing, Shulong Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2022, 43(12): 122101. doi: 10.1088/1674-4926/43/12/122101 ****
      T S Wei, X F Li, Z Y Li, W X Yang, Y Y Wu, Z W Xing, S L Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. J. Semicond, 2022, 43(12): 122101. doi: 10.1088/1674-4926/43/12/122101

      Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

      DOI: 10.1088/1674-4926/43/12/122101
      • 1.

        Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

      • 2.

        Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

      • 3.

        Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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      • Tieshi Wei：is currently a master student at the University of Science and Technology of China (USTC), and is jointly cultivated at the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS). His research interest is in molecular beam epitaxy growth of III–V semiconductor materials
      • Xuefei Li：is an assistant research fellow at the Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) from 2017. She rechieved his MSc degree from Guangxi university in 2012. Her current research interests include optoelectronic devices and molecular beam epitaxy growth of III–V semiconductor materials
      • Corresponding author: xfli2011@sinano.ac.cn; sllu2008@sinano.ac.cn
      • Received Date: 2022-06-12
      • Revised Date: 2022-07-19
        • Available Online: 2022-09-08

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