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J. Semicond. > 2022, Volume 43?>?Issue 1?> 010501

SHORT COMMUNICATION

A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode

Jing Yang1, Degang Zhao1, 2, , Zongshun Liu1, Feng Liang1, Ping Chen1, Lihong Duan1, Hai Wang1 and Yongsheng Shi1

+ Author Affiliations

 Corresponding author: Degang Zhao, dgzhao@red.semi.ac.cn

DOI: 10.1088/1674-4926/43/1/010501

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[1]
Nagahama S I, Yanamoto T, Sano M, et al. Study of GaN-based laser diodes in near ultraviolet region. Jpn J Appl Phys, 2002, 41, 5 doi: 10.1143/JJAP.41.5
[2]
Tsuzuki H, Mori F, Takeda K, et al. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer. Phys Status Solidi A, 2009, 206, 1199 doi: 10.1002/pssa.200880784
[3]
Kneissl M, Treat D W, Teepe M, et al. Ultraviolet AlGaN multiple-quantum-well laser diodes. Appl Phys Lett, 2003, 82, 4441 doi: 10.1063/1.1585135
[4]
Taketomi H, Aoki Y, Takagi Y, et al. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate. Jpn J Appl Phys, 2016, 55, 05FJ05 doi: 10.7567/JJAP.55.05FJ05
[5]
Yamashita Y, Kuwabara M, Torii K, et al. A 340-nm-band ultraviolet laser diode composed of GaN well layers. Opt Express, 2013, 3, 3133 doi: 10.1364/OE.21.003133
[6]
Nagahama S I, Sugimoto Y, Kozki T, et al. Recent progress of AlInGaN laser diodes. Proc SPIE, 2005, 5738 doi: 10.1117/12.597098
[7]
Yoshida H, Kuwabara M, Yamashita Y, et al. Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode. Appl Phys Lett, 2010, 96, 211122 doi: 10.1063/1.3442918
[8]
Zhao D G. III-nitride based ultraviolet laser diodes. J Semicond, 2019, 40, 120402 doi: 10.1088/1674-4926/40/12/120402
[9]
Yang J, Wang B B, Zhao D G, et al. Realization of 366nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers. J Appl Phys, 2021, 130, 173105 doi: 10.1063/5.0069567
[10]
Masui S, Matsuyama, Y, Yanamoto T, et al. 365 nm ultraviolet laser diodes composed of quaternary AlInGaN alloy. Jpn J Appl Phys, 2003, 42, L1318 doi: 10.1143/JJAP.42.L1318
[11]
Aoki Y, Kuwabara M, Yamashita Y, et al. A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN. Appl Phys Lett, 2015, 107, 151103 doi: 10.1063/1.4933257
[12]
Crawford M H, Allerman A A, Armstrong A M, et al. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates. Appl Phys Express, 2015, 8, 112702 doi: 10.7567/APEX.8.112702
Fig. 1.  (a) Schematic diagram of LD structure. (b) Output power of LD1 as a function of injected direct-current measured at room temperature (RT). The inset shows a photo of the laser with the blue far field pattern of the laser beam formed on the white paper screen. (c) Electroluminescence spectrum of UV LD1 under RT pulsed operation condition at an injection current of 1550 mA. The pulse width was 50 ns and the repetition rate was 10 kHz. (d) P?I curve of UV LD2 under RT pulsed operation condition, the inset shows it has a lasing wavelength of 362.6 nm at an injection current of 800 mA.

[1]
Nagahama S I, Yanamoto T, Sano M, et al. Study of GaN-based laser diodes in near ultraviolet region. Jpn J Appl Phys, 2002, 41, 5 doi: 10.1143/JJAP.41.5
[2]
Tsuzuki H, Mori F, Takeda K, et al. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer. Phys Status Solidi A, 2009, 206, 1199 doi: 10.1002/pssa.200880784
[3]
Kneissl M, Treat D W, Teepe M, et al. Ultraviolet AlGaN multiple-quantum-well laser diodes. Appl Phys Lett, 2003, 82, 4441 doi: 10.1063/1.1585135
[4]
Taketomi H, Aoki Y, Takagi Y, et al. Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate. Jpn J Appl Phys, 2016, 55, 05FJ05 doi: 10.7567/JJAP.55.05FJ05
[5]
Yamashita Y, Kuwabara M, Torii K, et al. A 340-nm-band ultraviolet laser diode composed of GaN well layers. Opt Express, 2013, 3, 3133 doi: 10.1364/OE.21.003133
[6]
Nagahama S I, Sugimoto Y, Kozki T, et al. Recent progress of AlInGaN laser diodes. Proc SPIE, 2005, 5738 doi: 10.1117/12.597098
[7]
Yoshida H, Kuwabara M, Yamashita Y, et al. Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode. Appl Phys Lett, 2010, 96, 211122 doi: 10.1063/1.3442918
[8]
Zhao D G. III-nitride based ultraviolet laser diodes. J Semicond, 2019, 40, 120402 doi: 10.1088/1674-4926/40/12/120402
[9]
Yang J, Wang B B, Zhao D G, et al. Realization of 366nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers. J Appl Phys, 2021, 130, 173105 doi: 10.1063/5.0069567
[10]
Masui S, Matsuyama, Y, Yanamoto T, et al. 365 nm ultraviolet laser diodes composed of quaternary AlInGaN alloy. Jpn J Appl Phys, 2003, 42, L1318 doi: 10.1143/JJAP.42.L1318
[11]
Aoki Y, Kuwabara M, Yamashita Y, et al. A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN. Appl Phys Lett, 2015, 107, 151103 doi: 10.1063/1.4933257
[12]
Crawford M H, Allerman A A, Armstrong A M, et al. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates. Appl Phys Express, 2015, 8, 112702 doi: 10.7567/APEX.8.112702

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    Received: 13 December 2021 Revised: Online: Accepted Manuscript: 17 December 2021Uncorrected proof: 17 December 2021Published: 04 January 2022

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      Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen, Lihong Duan, Hai Wang, Yongsheng Shi. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. Journal of Semiconductors, 2022, 43(1): 010501. doi: 10.1088/1674-4926/43/1/010501 ****J Yang, D G Zhao, Z S Liu, F Liang, P Chen, L H Duan, H Wang, Y S Shi, A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. J. Semicond., 2022, 43(1): 010501. doi: 10.1088/1674-4926/43/1/010501.
      Citation:
      Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen, Lihong Duan, Hai Wang, Yongsheng Shi. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. Journal of Semiconductors, 2022, 43(1): 010501. doi: 10.1088/1674-4926/43/1/010501 ****
      J Yang, D G Zhao, Z S Liu, F Liang, P Chen, L H Duan, H Wang, Y S Shi, A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode[J]. J. Semicond., 2022, 43(1): 010501. doi: 10.1088/1674-4926/43/1/010501.

      A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode

      DOI: 10.1088/1674-4926/43/1/010501
      • 1.

        State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

      More Information
      • Jing Yang：received the Ph.D. degree from University of Chinese Academy of Sciences (UCAS) in 2015. Then she joined in the Institute of Semiconductors, Chinese Academy of Sciences. She is currently an associate research fellow. Her current research interests include metal organic chemical vapor deposition growth of III-nitride material and devices, especially in GaN-based ultra violet and green laser diodes. She joined in the Youth Innovation Promotion Association of Chinese Academy of Sciences in 2019, and won the Beijing Nova Program in 2020
      • Degang Zhao：received B.Sc. and M.Sc. in University of Electronic Science and Technology of China in 1994 and 1997, respectively. He received the Ph.D. degree in Chinese Academy of Sciences in 2000. Later on, he joined in Institute of Semiconductors, Chinese Academy of Sciences, Beijing. He won the National Natural Science Foundation for Distinguished Young Scholars in 2009, won the National Award for Youth in Science and Technology of China in 2011. His research interests are mainly focused on GaN-based optoelectronic materials and devices, such as laser diodes and ultraviolet photodetectors. He has got many research achievements in the material growth and device fabrication, and has authored or co-authored over 300 articles in refereed journals and more than 40 patents
      • Corresponding author: dgzhao@red.semi.ac.cn
      • Received Date: 2021-12-13
      • Published Date: 2022-01-10

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