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J. Semicond. > 2021, Volume 42?>?Issue 7?> 072901

ARTICLES

Fiber coupled high count-rate single-photon generated from InAs quantum dots

Yao Chen1, 2, 3, Shulun Li3, 4, 5, Xiangjun Shang3, 4, 5, Xiangbin Su3, 4, 5, Huiming Hao3, 4, 5, Jiaxin Shen6, Yu Zhang3, 4, 5, Haiqiao Ni3, 4, 5, , Ying Ding1, 2, 3, and Zhichuan Niu3, 4, 5,

+ Author Affiliations

 Corresponding author: Haiqiao Ni, nihq@semi.ac.cn; Ying Ding, yingding@nwu.edu.cn; Zhichuan Niu, zcniu@semi.ac.cn

DOI: 10.1088/1674-4926/42/7/072901

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Abstract: In this work, we achieve high count-rate single-photon output in single-mode (SM) optical fiber. Epitaxial and dilute InAs/GaAs quantum dots (QDs) are embedded in a GaAs/AlGaAs distributed Bragg reflector (DBR) with a micro-pillar cavity, so as to improve their light emission extraction in the vertical direction, thereby enhancing the optical SM fiber’s collection capability (numerical aperture: 0.13). By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode (Q ~ 1800), we achieve a fiber-output single-photon count rate as high as 4.73 × 106 counts per second, with the second-order auto-correlation g2(0) remaining at 0.08.

Key words: single-photon source, fiber-output, high count rate



[1]
Kroutvar M, Ducommun Y, Heiss D, et al. Optically programmable electron spin memory using semiconductor quantum dots. Nature, 2004, 432, 81 doi: 10.1038/nature03008
[2]
Cade N I, Gotoh H, Kamada H, et al. Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 μm. Appl Phys Lett, 2006, 89, 181113 doi: 10.1063/1.2378403
[3]
He Y M, He Y, Wei Y J, et al. On-demand semiconductor single-photon source with near-unity indistinguishability. Nat Nano, 2013, 8, 213 doi: 10.1038/nnano.2012.262
[4]
Faraon A, Fushman I, Englund D, et al. Coherent generation of non-classical light on a chip via photon-induced tunnelling and blockade. Nat Phys, 2008, 4, 859 doi: 10.1038/nphys1078
[5]
Sebald K, Michler P, Passow T, et al. Single-photon emission of CdSe quantum dots at temperatures up to 200 K. Appl Phys Lett, 2002, 81, 2920 doi: 10.1063/1.1515364
[6]
Shan G C, Yin Z Q, Shek C H, et al. Single photon sources with single semiconductor quantum dots. Front Phys, 2014, 9, 170 doi: 10.1007/s11467-013-0360-6
[7]
Gazzano O, de Vasconcellos S M, Arnold C, et al. Bright solid-state sources of indistinguishable single photons. Nat Commun, 2013, 4, 1425 doi: 10.1038/ncomms2434
[8]
Buckley S, Rivoire K, Vu?kovi? J. Engineered quantum dot single-photon sources. Rep Prog Phys, 2012, 75, 126503 doi: 10.1088/0034-4885/75/12/126503
[9]
Lodahl P, van Driel A F, Nikolaev I S, et al. Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals. Nature, 2004, 430, 654 doi: 10.1038/nature02772
[10]
Ma Y, Kremer P E, Gerardot B D. Efficient photon extraction from a quantum dot in a broad-band planar cavity antenna. J Appl Phys, 2014, 115, 023106 doi: 10.1063/1.4861723
[11]
Fischbach S, Schlehahn A, Thoma A, et al. Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source. ACS Photonics, 2017, 4, 1327 doi: 10.1021/acsphotonics.7b00253
[12]
Miyazawa T, Takemoto K, Sakuma Y, et al. Single-photon generation in the 1.55-μm optical-fiber band from an InAs/InP quantum dot. Jpn J Appl Phys, 2005, 44, L620 doi: 10.1143/JJAP.44.L620
[13]
Takemoto K, Takatsu M, Hirose S, et al. An optical horn structure for single-photon source using quantum dots at telecommunication wavelength. J Appl Phys, 2007, 101, 081720 doi: 10.1063/1.2723177
[14]
Purcell E M. Spontaneous emission probabilities at radio frequencies. Phys Rev, 1946, 69, 681
[15]
Rayleigh L. CXII. The problem of the whispering gallery. Lond Edinb Dublin Philos Mag J Sci, 1910, 20, 1001 doi: 10.1080/14786441008636993
[16]
Kors A, Fuchs K, Yacob M, et al. Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities. Appl Phys Lett, 2017, 110, 031101 doi: 10.1063/1.4974207
[17]
Chang W H, Chen W Y, Chang H S, et al. Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities. Phys Rev Lett, 2006, 96, 117401 doi: 10.1103/PhysRevLett.96.117401
[18]
Claudon J, Bleuse J, Malik N S, et al. A highly efficient single-photon source based on a quantum dot in a photonic nanowire. Nat Photon, 2010, 4, 174 doi: 10.1038/nphoton.2009.287x
[19]
Ma B, Chen Z S, Wei S H, et al. Single photon extraction from self-assembled quantum dots via stable fiber array coupling. Appl Phys Lett, 2017, 110, 142104 doi: 10.1063/1.4979827
[20]
Li S L, Chen Y, Shang X J, et al. Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode. Nanoscale Res Lett, 2020, 15, 145 doi: 10.1186/s11671-020-03358-1
Fig. 1.  (Color online) The epi-structure of the sample.

Fig. 2.  (Color online) (a) Inscribing a stripe with a narrow ditch on the substrate along the gradient indium flux direction. (b) Dividing the stripe into four small parts (A, B, C, D). (c) Illustrations of selected areas for etching.

Fig. 3.  Schematic diagrams of (a) fiber coupling, (b) fiber array, (c) cross-section of optical fiber array. (d) SEM image of micropillar array.

Fig. 4.  (Color online) (a) Auxiliary coupling device. (b) The coupled fiber array is fixed onto the metal holder.

Fig. 5.  (a) Single photon coupled by the SM fiber at preliminary testing. (b) Multiple photons, coupled by one fiber.

Fig. 6.  (Color online) (a) Cavity modes are mismatched at 27.4 K (with p200 attenuation), using the Lorentz function fit for the PL spectrum. (b) Cavity modes matched at 33.6 K (with p200 attenuation), fitting the PL spectrum.

Fig. 7.  (Color online) (a) Three-dimensional PL spectrum with variable temperature from 27.4 to 40.4 K.

Fig. 8.  Intensity of single QD excitation (X) as the excitation power changes, where I ∝ $ {{P}}^{0.9378} $, and the intensity of CM (I ∝ $ {{P}}^{0.9384} $).

Fig. 9.  (a) Spectrum when the sample temperature is 32.4 K (with p0 attenuation). (b) Spectrum when the sample temperature is 33.6 K (with p0 attenuation). (c) The second-order correlation function of deconvolved data in the case of fitting cavity-mode mismatching (T = 32.4 K). (d) The second-order correlation function of deconvolved data in the case of fitting cavity-mode matching (T = 33.6 K).

[1]
Kroutvar M, Ducommun Y, Heiss D, et al. Optically programmable electron spin memory using semiconductor quantum dots. Nature, 2004, 432, 81 doi: 10.1038/nature03008
[2]
Cade N I, Gotoh H, Kamada H, et al. Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 μm. Appl Phys Lett, 2006, 89, 181113 doi: 10.1063/1.2378403
[3]
He Y M, He Y, Wei Y J, et al. On-demand semiconductor single-photon source with near-unity indistinguishability. Nat Nano, 2013, 8, 213 doi: 10.1038/nnano.2012.262
[4]
Faraon A, Fushman I, Englund D, et al. Coherent generation of non-classical light on a chip via photon-induced tunnelling and blockade. Nat Phys, 2008, 4, 859 doi: 10.1038/nphys1078
[5]
Sebald K, Michler P, Passow T, et al. Single-photon emission of CdSe quantum dots at temperatures up to 200 K. Appl Phys Lett, 2002, 81, 2920 doi: 10.1063/1.1515364
[6]
Shan G C, Yin Z Q, Shek C H, et al. Single photon sources with single semiconductor quantum dots. Front Phys, 2014, 9, 170 doi: 10.1007/s11467-013-0360-6
[7]
Gazzano O, de Vasconcellos S M, Arnold C, et al. Bright solid-state sources of indistinguishable single photons. Nat Commun, 2013, 4, 1425 doi: 10.1038/ncomms2434
[8]
Buckley S, Rivoire K, Vu?kovi? J. Engineered quantum dot single-photon sources. Rep Prog Phys, 2012, 75, 126503 doi: 10.1088/0034-4885/75/12/126503
[9]
Lodahl P, van Driel A F, Nikolaev I S, et al. Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals. Nature, 2004, 430, 654 doi: 10.1038/nature02772
[10]
Ma Y, Kremer P E, Gerardot B D. Efficient photon extraction from a quantum dot in a broad-band planar cavity antenna. J Appl Phys, 2014, 115, 023106 doi: 10.1063/1.4861723
[11]
Fischbach S, Schlehahn A, Thoma A, et al. Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source. ACS Photonics, 2017, 4, 1327 doi: 10.1021/acsphotonics.7b00253
[12]
Miyazawa T, Takemoto K, Sakuma Y, et al. Single-photon generation in the 1.55-μm optical-fiber band from an InAs/InP quantum dot. Jpn J Appl Phys, 2005, 44, L620 doi: 10.1143/JJAP.44.L620
[13]
Takemoto K, Takatsu M, Hirose S, et al. An optical horn structure for single-photon source using quantum dots at telecommunication wavelength. J Appl Phys, 2007, 101, 081720 doi: 10.1063/1.2723177
[14]
Purcell E M. Spontaneous emission probabilities at radio frequencies. Phys Rev, 1946, 69, 681
[15]
Rayleigh L. CXII. The problem of the whispering gallery. Lond Edinb Dublin Philos Mag J Sci, 1910, 20, 1001 doi: 10.1080/14786441008636993
[16]
Kors A, Fuchs K, Yacob M, et al. Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities. Appl Phys Lett, 2017, 110, 031101 doi: 10.1063/1.4974207
[17]
Chang W H, Chen W Y, Chang H S, et al. Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities. Phys Rev Lett, 2006, 96, 117401 doi: 10.1103/PhysRevLett.96.117401
[18]
Claudon J, Bleuse J, Malik N S, et al. A highly efficient single-photon source based on a quantum dot in a photonic nanowire. Nat Photon, 2010, 4, 174 doi: 10.1038/nphoton.2009.287x
[19]
Ma B, Chen Z S, Wei S H, et al. Single photon extraction from self-assembled quantum dots via stable fiber array coupling. Appl Phys Lett, 2017, 110, 142104 doi: 10.1063/1.4979827
[20]
Li S L, Chen Y, Shang X J, et al. Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode. Nanoscale Res Lett, 2020, 15, 145 doi: 10.1186/s11671-020-03358-1

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    History

    Received: 17 December 2020 Revised: 27 January 2021 Online: Accepted Manuscript: 31 March 2021Uncorrected proof: 07 April 2021Published: 05 July 2021

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      Yao Chen, Shulun Li, Xiangjun Shang, Xiangbin Su, Huiming Hao, Jiaxin Shen, Yu Zhang, Haiqiao Ni, Ying Ding, Zhichuan Niu. Fiber coupled high count-rate single-photon generated from InAs quantum dots[J]. Journal of Semiconductors, 2021, 42(7): 072901. doi: 10.1088/1674-4926/42/7/072901 ****Y Chen, S L Li, X J Shang, X B Su, H M Hao, J X Shen, Y Zhang, H Q Ni, Y Ding, Z C Niu, Fiber coupled high count-rate single-photon generated from InAs quantum dots[J]. J. Semicond., 2021, 42(7): 072901. doi: 10.1088/1674-4926/42/7/072901.
      Citation:
      Yao Chen, Shulun Li, Xiangjun Shang, Xiangbin Su, Huiming Hao, Jiaxin Shen, Yu Zhang, Haiqiao Ni, Ying Ding, Zhichuan Niu. Fiber coupled high count-rate single-photon generated from InAs quantum dots[J]. Journal of Semiconductors, 2021, 42(7): 072901. doi: 10.1088/1674-4926/42/7/072901 ****
      Y Chen, S L Li, X J Shang, X B Su, H M Hao, J X Shen, Y Zhang, H Q Ni, Y Ding, Z C Niu, Fiber coupled high count-rate single-photon generated from InAs quantum dots[J]. J. Semicond., 2021, 42(7): 072901. doi: 10.1088/1674-4926/42/7/072901.

      Fiber coupled high count-rate single-photon generated from InAs quantum dots

      DOI: 10.1088/1674-4926/42/7/072901
      • 1.

        State Key Laboratory of Photon-Technology in Western China Energy, Northwest University, Xi’an 710069, China

      • 2.

        Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China

      • 3.

        State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 4.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

      • 5.

        Beijing Academy of Quantum Information Sciences, Beijing 100193, China

      • 6.

        School of Microelectronics, Xidian University and The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi’an 710071, China

      More Information
      • Yao Chen：studies at Institute of Photonics & Photon-Technology, Northwest University of China. He is mainly engaged in research on semiconductors including single-photon source growth and semiconductor process
      • Haiqiao Ni：received B. E. and M. E. degrees in material science and engineering from Beijing University of Aeronautics and Astronautics in 1992 and 1995. He received Ph. D. degree in electrical engineering from National University of Singapore in 2002. In 2002, he joined Institute of Semiconductors, Chinese Academy of Sciences as a post-doctor and now as a researcher. His research interests include growth and characterization of InGaNAs(Sb) QWs, InAs QDs, metamorphic structures by MBE, devices for optical communications
      • Ying Ding：received Ph.D. degree in microelectronics and solid state electronics from the Institute of Semiconductors, Chinese Academy of Sciences. From 2005 to 2017, he worked in Hokkaido University, Nanyang Technological University, University of Dundee, andUniversity of Glasgow. Now he is working with Northwest University as an Adjunct Professor.He is also a visiting Research Fellow with the Institute of Semiconductors, Chinese Academyof Sciences
      • Corresponding author: nihq@semi.ac.cn; yingding@nwu.edu.cn; zcniu@semi.ac.cn
      • Received Date: 2020-12-17
      • Revised Date: 2021-01-27
      • Published Date: 2021-07-10

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