香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2021, Volume 42?>?Issue 6?> 062801

ARTICLES

3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

Kyuhyun Cha and Kwangsoo Kim

+ Author Affiliations

 Corresponding author: Kwangsoo Kim, kimks@sogang.ac.kr

DOI: 10.1088/1674-4926/42/6/062801

PDF

Turn off MathJax

Abstract: In this paper, a 4H-SiC DMOSFET with a source-contacted dummy gate (DG-MOSFET) is proposed and analyzed through Sentaurus TCAD and PSIM simulations. The source-contacted MOS structure forms fewer depletion regions than the PN junction. Therefore, the overlapping region between the gate and the drain can be significantly reduced while limiting RON degradation. As a result, the DG-MOSFET offers an improved high-frequency figure of merit (HF-FOM) over the conventional DMOSFET (C-MOSFET) and central-implant MOSFET (CI-MOSFET). The HF-FOM (RON×QGD) of the DG-MOSFET was improved by 59.2% and 22.2% compared with those of the C-MOSFET and CI-MOSFET, respectively. In a double-pulse test, the DG-MOSFET could save total power losses of 53.4% and 5.51%, respectively. Moreover, in a power circuit simulation, the switching power loss was reduced by 61.9% and 12.7% in a buck converter and 61% and 9.6% in a boost converter.

Key words: 4H-SiC, MOSFET, dummy-gate, gate-drain charge, switching loss



[1]
Zhang M, Wei J, Jiang H P, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Relib, 2017, 17, 432 doi: 10.1109/TDMR.2017.2694220
[2]
Cooper J A, Agarwal A. SiC power-switching devices-the second electronics revolution. Proc IEEE, 2002, 90, 956 doi: 10.1109/JPROC.2002.1021561
[3]
Du Y, Baek S, Bhattacharya S, et al. High-voltage high-frequency transformer design for a 7.2 kV to 120 V/240 V 20 kVA solid state transformer. IECON 2010 – 36th Annual Conference on IEEE Industrial Electronics Society, 2010, 493
[4]
Ozdemir S, Acar F, Selamoigullari U. Comparison of silicon carbide MOSFET and IGBT based electric vehicle traction inverters. 2015 International Conference on Electrical Engineering and Informatics (ICEEI), 2015, 1
[5]
Yano H, Nakao H, Hatayama T, et al. Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates. Mater Sci Forum, 2007, 556/557, 807 doi: 10.4028/www.scientific.net/MSF.556-557.807
[6]
Banzhaf C T, Grieb M, Trautmann A, et al. Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures. Mater Sci Forum, 2013, 740–742, 691 doi: 10.4028/www.scientific.net/MSF.740-742.691
[7]
Agarwal A K, Siergiej R R, Seshadri S, et al. A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures. 8th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 1997, 70(20), 2732
[8]
T. C. A. C Synopsys Sentaurus Device Manual Synopsys, Inc., (Version O-2018.06). Mountail View, CA, USA
[9]
Zhang Q C J, Duc J, Hull B, et al. CIMOSFET: A new MOSFET on SiC with a superior Ron·Qgd figure of merit. Mater Sci Forum, 2015, 821–823, 765 doi: 10.4028/www.scientific.net/MSF.821-823.765
[10]
Jiang J Y, Wu T L, Zhao F, et al. Numerical study of 4H-SiC UMOSFETs with split-gate and P+ shielding. Energies, 2020, 13, 1122 doi: 10.3390/en13051122
[11]
Lombardi C, Manzini S, Saporito A, et al. A physically based mobility model for numerical simulation of nonplanar devices. IEEE Trans Comput-Aided Des Integr Circuits Syst, 1988, 7, 1164 doi: 10.1109/43.9186
[12]
Hatakeyama T, Nishio T, Ota C, et al. Physical modeling and scaling properties of 4H-SiC power devices. International Congerence on Simulation of Semiconductor Processed and Devices, 2005, 171
[13]
Zhao Y, Niwa H, Kimoto T. Impact ionization coefficients of 4H-SiC in a wide temperature range. Jpn J Appl Phys, 2019, 58, 018001 doi: 10.7567/1347-4065/aae985
[14]
Vudumula P, Kotamraju S. Design and optimization of 1.2-kV SiC planar inversion MOSFET using split dummy gate concept for high-frequency applications. IEEE Trans Electron Devices, 2019, 66, 5266 doi: 10.1109/TED.2019.2949459
[15]
Jiang J Y, Huang C F, Wu T L, et al. Simulation study of 4h-SiC trench MOSFETs with various gate structures. Electron Devices Technology and Manufacturing Conference (EDTM), 2019, 401
[16]
Sui Y, Tsuji T, Cooper J A. On-state characteristics of SiC power UMOSFETs on 115-μm drift layers. IEEE Electron Device Lett, 2005, 26, 255 doi: 10.1109/LED.2005.845495
[17]
?imonka V, H?ssinger A, Weinbub J, et al. Growth rates of dry thermal oxidation of 4H-silicon carbide. J Appl Phys, 2016, 120, 135705 doi: 10.1063/1.4964688
[18]
Singh R, Hefner A R. Reliability of SiC MOS devices. Solid-State Electron, 2004, 48, 1717 doi: 10.1016/j.sse.2004.05.005
[19]
Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2018, 39, 248 doi: 10.1109/LED.2017.2785771
[20]
Baliga B J. Fundamentals of power semiconductor devices. Boston, MA: Springer, 2008
[21]
Wei J, Zhang M, Jiang H P, et al. Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations. IEEE Trans Electron Devices, 2017, 64, 2592 doi: 10.1109/TED.2017.2697763
[22]
Mohan N, Undeland T M, Robbins W P. Power electronics: Converters, applications, and design. John Wiley & Sons, 2003
Fig. 1.  (Color online) Schematic cross-sectional structure of (a) C-MOSFET, (b) CI-MOSFET, and (c) DG-MOSFET.

Fig. 2.  (Color online) Proposed key fabrication process flow of DG-MOSFET. (a) Ion implantation to form the p-well and n+ source. (b) Dummy etching. (c) Dummy oxide deposition. (d) Nitride mask removal & poly-Si deposition. (e) Poly-Si etchback. (f) Gate oxidation and patterning.

Fig. 3.  (Color online) Influences of WJF and NJF of C-MOSFET. (a) The trade-off between RON and BV and (b) RON and EMOX (EMOX was measured at VDS = 3300 V.).

Fig. 4.  (Color online) Changes of FOM according to WJF and NJF of C-MOSFET.

Fig. 6.  (Color online) FOM as a variation of WCI and DCI.

Fig. 5.  (Color online) The trade-off between RON and BV as variation of WCI and DCI.

Fig. 7.  (Color online) Influences of WDG and DDG of DG-MOSFET. (a) Trade-off between RON and BV and (b) RON and EMOX (EMOX was measured at VDS = 3300 V.).

Fig. 8.  (Color online) Electric field distribution of three structures at VDS = 3300 V. (a) C-MOSFET. (b) CI-MOSFET. (c) DG-MOSFET.

Fig. 9.  (Color online) Static characteristics of three structures.

Fig. 10.  (Color online) Input and Gate-Drain capacitance of three structures.

Fig. 11.  (Color online) Gate-drain charge curve of three structures.

Fig. 12.  (Color online) (a) Turn off and (b) turn on transient of the three structures.

Fig. 13.  (a) Buck converter and (b) boost converter circuit used in the power loss simulation.

Fig. 14.  (Color online) Switching power loss in the power circuit. (a) Buck converter. (b) Boost converter.

Table 1.   Static characteristics of the optimized three structures.

ParameterC-MOSFETCI-MOSFETDG-MOSFET
RON (mΩ?cm2)10.3412.0111.91
BV (V)330533743343
FOM (MW/cm2)1056947934
DownLoad: CSV

Table 2.   Capacitance and gate charge values of the three structures.

ParameterC-MOSFETCI-MOSFETDG-MOSFET
CISS (nF/cm2)14.821.925.7
CGD (pF/cm2)66.6721.1219.36
QGD (nC/cm2)353.1159.5125.3
RON×QGD (mΩ?nC)365119161492
CRSS and CGD were simulated at VDS = 1000 V and QGD was simulated at IGS = 100 mA and VDD = 1700 V.
DownLoad: CSV

Table 3.   Double-pulse test simulation results.

ParameterC-MOSFETCI-MOSFETDG-MOSFET
EON (mJ/cm2)41.917.2716.03
EOFF (mJ/cm2)11.277.847.68
ESW (mJ/cm2)53.1725.1123.71
DownLoad: CSV

Table 4.   Power simulation results (f = 500 kHz).

Power circuitC-MOSFETCI-MOSFETDG-MOSFET
Buck converter (kW)20.6168.9347.784
Boost converter (kW)48.73120.92318.901
DownLoad: CSV
[1]
Zhang M, Wei J, Jiang H P, et al. A new SiC trench MOSFET structure with protruded p-base for low oxide field and enhanced switching performance. IEEE Trans Device Mater Relib, 2017, 17, 432 doi: 10.1109/TDMR.2017.2694220
[2]
Cooper J A, Agarwal A. SiC power-switching devices-the second electronics revolution. Proc IEEE, 2002, 90, 956 doi: 10.1109/JPROC.2002.1021561
[3]
Du Y, Baek S, Bhattacharya S, et al. High-voltage high-frequency transformer design for a 7.2 kV to 120 V/240 V 20 kVA solid state transformer. IECON 2010 – 36th Annual Conference on IEEE Industrial Electronics Society, 2010, 493
[4]
Ozdemir S, Acar F, Selamoigullari U. Comparison of silicon carbide MOSFET and IGBT based electric vehicle traction inverters. 2015 International Conference on Electrical Engineering and Informatics (ICEEI), 2015, 1
[5]
Yano H, Nakao H, Hatayama T, et al. Increased channel mobility in 4H-SiC UMOSFETs using on-axis substrates. Mater Sci Forum, 2007, 556/557, 807 doi: 10.4028/www.scientific.net/MSF.556-557.807
[6]
Banzhaf C T, Grieb M, Trautmann A, et al. Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures. Mater Sci Forum, 2013, 740–742, 691 doi: 10.4028/www.scientific.net/MSF.740-742.691
[7]
Agarwal A K, Siergiej R R, Seshadri S, et al. A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures. 8th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 1997, 70(20), 2732
[8]
T. C. A. C Synopsys Sentaurus Device Manual Synopsys, Inc., (Version O-2018.06). Mountail View, CA, USA
[9]
Zhang Q C J, Duc J, Hull B, et al. CIMOSFET: A new MOSFET on SiC with a superior Ron·Qgd figure of merit. Mater Sci Forum, 2015, 821–823, 765 doi: 10.4028/www.scientific.net/MSF.821-823.765
[10]
Jiang J Y, Wu T L, Zhao F, et al. Numerical study of 4H-SiC UMOSFETs with split-gate and P+ shielding. Energies, 2020, 13, 1122 doi: 10.3390/en13051122
[11]
Lombardi C, Manzini S, Saporito A, et al. A physically based mobility model for numerical simulation of nonplanar devices. IEEE Trans Comput-Aided Des Integr Circuits Syst, 1988, 7, 1164 doi: 10.1109/43.9186
[12]
Hatakeyama T, Nishio T, Ota C, et al. Physical modeling and scaling properties of 4H-SiC power devices. International Congerence on Simulation of Semiconductor Processed and Devices, 2005, 171
[13]
Zhao Y, Niwa H, Kimoto T. Impact ionization coefficients of 4H-SiC in a wide temperature range. Jpn J Appl Phys, 2019, 58, 018001 doi: 10.7567/1347-4065/aae985
[14]
Vudumula P, Kotamraju S. Design and optimization of 1.2-kV SiC planar inversion MOSFET using split dummy gate concept for high-frequency applications. IEEE Trans Electron Devices, 2019, 66, 5266 doi: 10.1109/TED.2019.2949459
[15]
Jiang J Y, Huang C F, Wu T L, et al. Simulation study of 4h-SiC trench MOSFETs with various gate structures. Electron Devices Technology and Manufacturing Conference (EDTM), 2019, 401
[16]
Sui Y, Tsuji T, Cooper J A. On-state characteristics of SiC power UMOSFETs on 115-μm drift layers. IEEE Electron Device Lett, 2005, 26, 255 doi: 10.1109/LED.2005.845495
[17]
?imonka V, H?ssinger A, Weinbub J, et al. Growth rates of dry thermal oxidation of 4H-silicon carbide. J Appl Phys, 2016, 120, 135705 doi: 10.1063/1.4964688
[18]
Singh R, Hefner A R. Reliability of SiC MOS devices. Solid-State Electron, 2004, 48, 1717 doi: 10.1016/j.sse.2004.05.005
[19]
Han K, Baliga B J, Sung W. A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results. IEEE Electron Device Lett, 2018, 39, 248 doi: 10.1109/LED.2017.2785771
[20]
Baliga B J. Fundamentals of power semiconductor devices. Boston, MA: Springer, 2008
[21]
Wei J, Zhang M, Jiang H P, et al. Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations. IEEE Trans Electron Devices, 2017, 64, 2592 doi: 10.1109/TED.2017.2697763
[22]
Mohan N, Undeland T M, Robbins W P. Power electronics: Converters, applications, and design. John Wiley & Sons, 2003

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4881 Times PDF downloads: 273 Times Cited by: 0 Times

    History

    Received: 08 October 2010 Revised: 06 November 2020 Online: Accepted Manuscript: 02 December 2020Uncorrected proof: 18 December 2020Published: 01 June 2021

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Kyuhyun Cha, Kwangsoo Kim. 3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications[J]. Journal of Semiconductors, 2021, 42(6): 062801. doi: 10.1088/1674-4926/42/6/062801 ****K Cha, K Kim, 3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications[J]. J. Semicond., 2021, 42(6): 062801. doi: 10.1088/1674-4926/42/6/062801.
      Citation:
      Kyuhyun Cha, Kwangsoo Kim. 3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications[J]. Journal of Semiconductors, 2021, 42(6): 062801. doi: 10.1088/1674-4926/42/6/062801 ****
      K Cha, K Kim, 3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications[J]. J. Semicond., 2021, 42(6): 062801. doi: 10.1088/1674-4926/42/6/062801.

      3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

      DOI: 10.1088/1674-4926/42/6/062801

      • Department of Electronic Engineering, Sogang University, Seoul 04107, Korea

      More Information
      • Kyuhyun Cha：got his BS defree from Dankook University in 2020. Now he is in Master's course at Sogang University under the supervision of Prof. Kim. His research focuses on 4H-SiC semiconductors
      • Kwangsoo Kim：is Professor of the Department of Electronic Engineering at Sogang University. He holds degrees from Sogang University (BSEE, 1881, MSEE, 1983 and PhDEE, 1992). From 1982 to 1998 he was with the Electronics and Telecommunications Research Institute, working on silicon devices (CMOS, Bipolar & BiCMOS). From 1988 to 1992, he carried out his PhD dissertation?at Sogang Graduate School on the high speed and high density BiCMOS device. From 1999 to 2005 he was principal research engineer with IITA where he planned new component technology about Information & Communication Technology of Korea. From 2005 to 2008 he was principal research engineer with DGIST where he conducted research on IT convergence technology for intelligent vehicles. He joined Sogang University in 2008. His current research interests focus on the technology, modeling and reliability analysis of SiC power devices for electric vehicles
      • Corresponding author: kimks@sogang.ac.kr
      • Received Date: 2010-10-08
      • Revised Date: 2020-11-06
      • Published Date: 2021-06-10

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return