Fig. 1.
(Color online) A typical P–I–V curves of the fabricated laser diodes.
ARTICLES
Zhanqiang Ren, Qingmin Li, Bo Li and Kechang Song
Corresponding author: Zhanqiang Ren, renzq@lumcore.com; Qingmin Li, Email: liqm@lumcore.com
Abstract: A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance. The laser chips were p-side-down mounted on the AlN sub-mount, and then tested at continuous wave (CW) operation with the heat-sink temperature setting to 25 °C using a thermoelectric cooler (TEC). As high as 60.5% of the wall-plug efficiency (WPE) was achieved at the injection current of 11 A. The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12 °C. Accelerated life-time test showed that the laser diodes had lifetimes of over 62 111 h operating at rated power of 10 W.
Key words: high power semiconductor lasers, high wall-plug efficiency, COMD
| [1] |
Gao W, Cheng L, Luo K J. High power high reliable single emitter laser diodes at 808 nm. Proc SPIE, 2007, 6456, 64560B
|
| [2] |
Van de Casteele J, Bettiati M, Laruelle F, et al. High reliability level on single-mode 980 nm – 1060 nm diode lasers for telecommunication and industrial applications. Proc SPIE, 2008, 6876, 68760P doi: 10.1117/12.762943
|
| [3] |
Sin Y K, Presser N, Foran B, et al. Investigation of catastrophic degradation in high power muliti-mode InGaAs strained quantum well single emitters. Proc SPIE, 2008, 6870, 68760R
|
| [4] |
Ziegler M, Tomm J W, Zeimer U, et al. Imaging catastrophic optical mirror damage in high-power diode lasers. J Electron Mater, 2010, 39(6), 709 doi: 10.1007/s11664-010-1146-z
|
| [5] |
Bao L, Wang J, DeVito M, et al. Reliability of high performance 9xx-nm single emitter diode lasers. Proc SPIE, 2010, 7583, 758302 doi: 10.1117/12.842856
|
| [6] |
Gilly J, Friedmann P, Kissel H, et al. High power broad area lasers optimized for fiber laser pumping. Proc SPIE, 2012, 8241, 82410T doi: 10.1117/12.906701
|
| [7] |
Levy M, Rappaport N, Klumel G, et al. High-power single emitters for fiber laser pumping across 8xx nm – 9xx nm wavelength bands. Proc SPIE, 2012, 8241, 82410A
|
| [8] |
Sin Y K, LaLumondiere S, Foran B, et al. Catastrophic optical bulk damage (COBD) processes in aged and proton-irradiated high power InGaAs-AlGaAs strained quantum well lasers. Proc SPIE, 2013, 8605, 86050M doi: 10.1117/12.2001530
|
| [9] |
Lee S J, An H J, Ji T. Optimization of high and anti-reflective facet coating for near infrared high power laser diode. Adv Sci Technol Lett, 2016, 139, 418 doi: 10.14257/astl.2016.139.83
|
| [10] |
Leonhauser B, Kissel H, Unger A, et al. Feedback-induced catastrophic optical mirror damage (COMD) on 976 nm broad area single emitters with different AR reflectivity. Proc SPIE, 2014, 8965, 896506
|
| [11] |
Sin Y, Lingley Z, Brodie M, et al. Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs–AlGaAs strained quantum well lasers. Proc SPIE, 2017, 10086, 100860S
|
| [12] |
Zhang Y, Ning Y Q, Zhang L S, et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs. Opt Express, 2011, 19(13), 12569 doi: 10.1364/OE.19.012569
|
Table 1. The device structure.
| Layer | Material | x/y value | Thickness (μm) | Doping (cm–3) |
| 10 | GaAs | 0.15 | p > 4.0 × 1019 | |
| 9 | AlxGaAs | 0.05–0.53 | 0.05 | p = 3.0 × 1018 |
| 8 | AlxGaAs | 0.53 | 1.0 | p = 2.0 × 1018 |
| 7 | AlxGaAs | 0.35 | 0.4 | Undoped |
| 6 | InxAlyGaAs | 0.11/0.09 | 0.0075 | Undoped |
| 5 | AlxGaAs | 0.35 | 0.45 | Undoped |
| 4 | AlxGaAs | 0.35 | 0.3 | n = 1.0 × 1017 |
| 3 | AlxGaAs | 0.53 | 1.0 | n = 5.0 × 1017 |
| 2 | AlxGaAs | 0.45–0.05 | 0.05 | n = 1.0 × 1018– 2.0 × 1018 |
| 1 | GaAs buffer | 0.5 | n = 2.0 × 1018 |
DownLoad: CSV
| [1] |
Gao W, Cheng L, Luo K J. High power high reliable single emitter laser diodes at 808 nm. Proc SPIE, 2007, 6456, 64560B
|
| [2] |
Van de Casteele J, Bettiati M, Laruelle F, et al. High reliability level on single-mode 980 nm – 1060 nm diode lasers for telecommunication and industrial applications. Proc SPIE, 2008, 6876, 68760P doi: 10.1117/12.762943
|
| [3] |
Sin Y K, Presser N, Foran B, et al. Investigation of catastrophic degradation in high power muliti-mode InGaAs strained quantum well single emitters. Proc SPIE, 2008, 6870, 68760R
|
| [4] |
Ziegler M, Tomm J W, Zeimer U, et al. Imaging catastrophic optical mirror damage in high-power diode lasers. J Electron Mater, 2010, 39(6), 709 doi: 10.1007/s11664-010-1146-z
|
| [5] |
Bao L, Wang J, DeVito M, et al. Reliability of high performance 9xx-nm single emitter diode lasers. Proc SPIE, 2010, 7583, 758302 doi: 10.1117/12.842856
|
| [6] |
Gilly J, Friedmann P, Kissel H, et al. High power broad area lasers optimized for fiber laser pumping. Proc SPIE, 2012, 8241, 82410T doi: 10.1117/12.906701
|
| [7] |
Levy M, Rappaport N, Klumel G, et al. High-power single emitters for fiber laser pumping across 8xx nm – 9xx nm wavelength bands. Proc SPIE, 2012, 8241, 82410A
|
| [8] |
Sin Y K, LaLumondiere S, Foran B, et al. Catastrophic optical bulk damage (COBD) processes in aged and proton-irradiated high power InGaAs-AlGaAs strained quantum well lasers. Proc SPIE, 2013, 8605, 86050M doi: 10.1117/12.2001530
|
| [9] |
Lee S J, An H J, Ji T. Optimization of high and anti-reflective facet coating for near infrared high power laser diode. Adv Sci Technol Lett, 2016, 139, 418 doi: 10.14257/astl.2016.139.83
|
| [10] |
Leonhauser B, Kissel H, Unger A, et al. Feedback-induced catastrophic optical mirror damage (COMD) on 976 nm broad area single emitters with different AR reflectivity. Proc SPIE, 2014, 8965, 896506
|
| [11] |
Sin Y, Lingley Z, Brodie M, et al. Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs–AlGaAs strained quantum well lasers. Proc SPIE, 2017, 10086, 100860S
|
| [12] |
Zhang Y, Ning Y Q, Zhang L S, et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs. Opt Express, 2011, 19(13), 12569 doi: 10.1364/OE.19.012569
|
Article views: 5513 Times PDF downloads: 165 Times Cited by: 0 Times
Received: 27 March 2019 Revised: 04 September 2019 Online: Accepted Manuscript: 18 December 2019Uncorrected proof: 23 December 2019Published: 01 March 2020
| Citation: |
Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song. High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. Journal of Semiconductors, 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901
****
Z Q Ren, Q M Li, B Li, K C Song, High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W[J]. J. Semicond., 2020, 41(3): 032901. doi: 10.1088/1674-4926/41/3/032901.
|
| [1] |
Gao W, Cheng L, Luo K J. High power high reliable single emitter laser diodes at 808 nm. Proc SPIE, 2007, 6456, 64560B
|
| [2] |
Van de Casteele J, Bettiati M, Laruelle F, et al. High reliability level on single-mode 980 nm – 1060 nm diode lasers for telecommunication and industrial applications. Proc SPIE, 2008, 6876, 68760P doi: 10.1117/12.762943
|
| [3] |
Sin Y K, Presser N, Foran B, et al. Investigation of catastrophic degradation in high power muliti-mode InGaAs strained quantum well single emitters. Proc SPIE, 2008, 6870, 68760R
|
| [4] |
Ziegler M, Tomm J W, Zeimer U, et al. Imaging catastrophic optical mirror damage in high-power diode lasers. J Electron Mater, 2010, 39(6), 709 doi: 10.1007/s11664-010-1146-z
|
| [5] |
Bao L, Wang J, DeVito M, et al. Reliability of high performance 9xx-nm single emitter diode lasers. Proc SPIE, 2010, 7583, 758302 doi: 10.1117/12.842856
|
| [6] |
Gilly J, Friedmann P, Kissel H, et al. High power broad area lasers optimized for fiber laser pumping. Proc SPIE, 2012, 8241, 82410T doi: 10.1117/12.906701
|
| [7] |
Levy M, Rappaport N, Klumel G, et al. High-power single emitters for fiber laser pumping across 8xx nm – 9xx nm wavelength bands. Proc SPIE, 2012, 8241, 82410A
|
| [8] |
Sin Y K, LaLumondiere S, Foran B, et al. Catastrophic optical bulk damage (COBD) processes in aged and proton-irradiated high power InGaAs-AlGaAs strained quantum well lasers. Proc SPIE, 2013, 8605, 86050M doi: 10.1117/12.2001530
|
| [9] |
Lee S J, An H J, Ji T. Optimization of high and anti-reflective facet coating for near infrared high power laser diode. Adv Sci Technol Lett, 2016, 139, 418 doi: 10.14257/astl.2016.139.83
|
| [10] |
Leonhauser B, Kissel H, Unger A, et al. Feedback-induced catastrophic optical mirror damage (COMD) on 976 nm broad area single emitters with different AR reflectivity. Proc SPIE, 2014, 8965, 896506
|
| [11] |
Sin Y, Lingley Z, Brodie M, et al. Catastrophic optical bulk degradation (COBD) in high-power single- and multi-mode InGaAs–AlGaAs strained quantum well lasers. Proc SPIE, 2017, 10086, 100860S
|
| [12] |
Zhang Y, Ning Y Q, Zhang L S, et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs. Opt Express, 2011, 19(13), 12569 doi: 10.1364/OE.19.012569
|
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