Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Asma Belaid; Abdelkader Hamdoune

doi:10.1088/1674-4926/40/3/032802

J. Semicond. > 2019, Volume 40?>?Issue 3?> 032802

ARTICLES

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Asma Belaid and Abdelkader Hamdoune

+ Author Affiliations

Corresponding author: Asma Belaid, Email: belaidaasma@gmail.com

DOI: 10.1088/1674-4926/40/3/032802

Abstract: The objective of this work is to simulate a single quantum well ultraviolet light emitting diode (LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm^?1 eV^?1, a maximum spontaneous emission of 3.34 × 10²⁸ and 3.43 × 10²⁸ s^?1 cm^?3 eV^?1, and a maximum Light output power of 0.56 and 0.89 mW.

Key words: gallium nitride (GaN), aluminum gallium nitride (AlGaN), boron gallium nitride (BGaN), UV light emitting diode (LED)

References

[1]	Hamdoune A. Elaboration du nitrure de gallium, étude de ses propriétés et applications. Thesis of Doctorate, University of Abou-Bakr Belkaid, Tlemcen, Algeria, 2006
[2]	Nakamura S. III-V nitride based light-emitting devices. Solid State Communications, 1997. 102: 237 doi: 10.1016/S0038-1098(96)00722-3
[3]	Masui H, Nakamura S, DenBaars S P, et al. Nonpolar and semipolar III-nitride light-emitting diodes: achievements and challenges. IEEE Trans Electron Devices, 2010, 57: 88 doi: 10.1109/TED.2009.2033773
[4]	Hu H P, Zhou S J, Liu X T, et al. Effects of GaN/AlGaN/sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes. J Scientific Reports, 2017, 7, 44627 doi: 10.1038/srep44627
[5]	Kneissl M, Kolbe T, Chua C, et al. Advances in group III-nitride-based deep UV light-emitting diode technology. J Semicond Sci Technol 2011, 26 , 014036 doi: 10.1088/0268-1242/26/1/014036
[6]	Kneissl M, Rass J. III nitride ultraviolet emitters. Springer Series in Materials Science 2016, 227, 1
[7]	Khan A, Balakrishnan K, Katona T. Ultraviolet light-emitting diodes based on group three nitrides. J Nat Photonics 2008, 2, 77 doi: 10.1038/nphoton.2007.293
[8]	Nakamura S, Krames M R. History of gallium-nitride-based light-emitting diodes for illumination. Proc IEEE, 2013, 101(10), 2211 doi: 10.1109/JPROC.2013.2274929
[9]	Verzellesi G , Saguatti D, Meneghini M, et al. Efficiency droop in InGaN/GaN blue light-emitting diodes: physic mechanisms remedies. J Appl Phys 2013, 114(7), 071101. doi: 10.1063/1.4816434
[10]	Yang W, Wang W, Lin Y, et al. Deposition of nonpolar mplane InGaN/GaN multiple quantum wells on LiGaO+(100) substrates. J Mater Chem C 2014, 2(5), 801 doi: 10.1039/C3TC31935K
[11]	Schubert M F, Xu J, Kim J K, et al. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl Phys Lett. 2008, 93(4), 041102. doi: 10.1063/1.2963029
[12]	Lin Z T, Wang H Y, Wang W L, et al. Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs. J Opt Express, 2016, 24, 11886. doi: 10.1364/OE.24.011885
[13]	Hirayama H, Fujikawa S, Noguchi N, et al. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. J Phys Status Solidi A, 2009, 206, 1176 doi: 10.1002/pssa.v206:6
[14]	Takano T, Fujikawa S, Kondo Y, et al. Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. J Phys Status Solidi C, 2008, 5, 2102 doi: 10.1002/(ISSN)1610-1642
[15]	Lin Z T, Wang H T, Lin Y H, et al. Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates. J Appl Phys, 2017, 122, 204503. doi: 10.1063/1.4993985
[16]	Meel K, Mahala P, Singh S. Design and fabrication of multi quantum well based GaN/InGaN blue LED. IOP Conf Ser: Mater Sci Eng, 2018, 331, 012008 doi: 10.1088/1757-899X/331/1/012008
[17]	Gautier S, Patriarche G, Moudakir T. Deep structural analysis of novel BGaN material layers grown by MOVPE. J Cryst Growth 2011, 315, 288 doi: 10.1016/j.jcrysgro.2010.08.042
[18]	Pease R S. An X-ray study of boron nitride. Acta Crystallogr. 1952, 5, 356. doi: 10.1107/S0365110X52001064
[19]	Herold A, Marzluf B, Perio P, et al. Inorganic reactions and methods. Formation of Ceramics Seances Acad Sci 1958, 246, 1866
[20]	Thomas J, Weston N E, O’connor T, et al. Boron nitride, thermal transformation to ordered-layer-lattice boron nitride. J Am Chem Soc 1962, 84, 4619. doi: 10.1021/ja00883a001
[21]	Wentorf R Jr. Cubic form of boron nitride. J Chem Phys, 1957, 26, 956. doi: 10.1063/1.1745964
[22]	Wentorf R Jr. Synthesis of the cubic form of boron nitride. J Chem Phys. 1961, 34, 809. doi: 10.1063/1.1731679
[23]	Tsao J Y, Chowdhury S, Hollis M A, et al. Ultrawide-bandgap semiconductors: research opportunities and challenges. J Adv Electron Mater. 2018, 4, 1600501 doi: 10.1002/aelm.201600501
[24]	Zhang X. Thin solid films electronic and photonic applications, 2013, 544, 2. doi: 10.1016/j.tsf.2013.07.001
[25]	Dreyer C E, Lyons J L, Janotti A, et al. Band alignments and polarization properties of BN polymorphs. Appl Phys Express, 2014, 7, 031001. doi: 10.7567/APEX.7.031001
[26]	Gunning B P, Moseley M W, Koleske D D, et al. Phase degradation in B_xGa_1-xN films grown at low temperature by metalorganic vapor phase epitaxy. J Cryst Growth, 2017, 464, 190. doi: 10.1016/j.jcrysgro.2016.10.054
[27]	Ougazzaden A, Gautier S, Moudakir T. Band gap bowing in BGaN thin films. Appl Phys Lett, 2008, 93, 083118 doi: 10.1063/1.2977588
[28]	Atlas User’s Manual; Silvaco International Inc. Santa Clara, CA, USA. Version: 2012
[29]	Lachebi A, Abid H, DrizMand Al-Douri Y. First-principles study of cubic B_xGa_1–xN alloys. Int J Nanoelectron, 2008, 1, 81 doi: 10.3906/.z-0902-3
[30]	Schubert E F. Light-emitting diodes. 2nd ed. Cambridge University Press, 2006, 432
[31]	Ambacher O, Dimitrov R, Stutzmann M, et al. Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices. J Phys Stat Sol, 1999, 216, 381 doi: 10.1002/(ISSN)1521-3951

Fig. 1. (Color online) Schematic structure of UV LEDs with GaN and BGaN single quantum well.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Injection current versus forward voltage for GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Spontaneous emission of GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Power spectral density of GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) Light output power of GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) Flux spectral density for GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) Gain TE for GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Fig. 8. (Color online) External quantum efficiency for GaN-LED and BGaN-LED.

DownLoad: Full-Size Img PowerPoint

Table 1. Summarized values of spontaneous emission for GaN-LED and BGaN-LED.

	QW thickness (nm)	7	10	15	20
GaN-LED	Peak energy (eV)	3.43	3.43	3.44	3.45
	λ (nm)	361.5	361.5	360.5	359.4
	Spontaneous emission (10²⁸ s^?1 cm^?3 eV^?1)	1.15	1.53	2.36	3.34
BGaN-LED	Peak energy (eV)	3.43	3.36	3.36	3.36
	λ (nm)	361.5	369	369	369
	Spontaneous emission (10²⁸ s^?1 cm^?3 eV^?1)	2.04	3.43	2.53	2.08
Ratio of spontaneous emissions		1.77	2.24	1.07	0.62
Difference between spontaneous emissions (10²⁸ s^?1 cm^?3 eV^?1)		0.89	1.9	0.17	?1.26

DownLoad: CSV

Table 2. Summarized values of power spectral density for GaN-LED and BGaN-LED.

	QW thickness (nm)	7	10	15	20
GaN-LED	Peak energy (eV)	3.46	3.45	3.45	3.45
	λ (nm)	358.4	359.4	359.4	359.4
	Power spectral density (W cm^?1 eV^?1)	1.61	1.81	1.84	1.93
BGaN-LED	Peak energy (eV)	3.35	3.31	3.31	3.31
	λ (nm)	370.1	374.6	374.6	374.6
	Power spectral density (W cm^?1 eV^?1)	2.4	5.6	6.1	6.7
Ratio of power spectral densities		1.49	3.09	3.31	3.47
Difference between power spectral densities (W cm^?1 eV^?1)		0.79	3.79	4.26	4.77

DownLoad: CSV

Table 3. Summarized values of flux spectral density for GaN-LED and BGaN-LED.

	QW thickness (nm)	7	10	15	20
GaN-LED	Peak energy (eV)	3.47	3.46	3.45	3.45
	λ (nm)	357.3	358.4	359.4	359.4
	Flux spectral density (10¹⁸ s^?1 cm^?1 eV^?1)	2.91	3.25	3.32	3.5
BGaN-LED	Peak energy (eV)	3.35	3.31	3.31	3.31
	λ (nm)	370.1	374.6	374.6	374.6
	Flux spectral density (10¹⁸ s^?1 cm^?1 eV^?1)	4.48	10.3	11.3	12.5
Ratio of flux spectral densities (s^?1 cm^?1 eV^?1)		1.54	3.17	3.40	3.57
Difference between flux spectral densities (10¹⁸ s^?1 cm^?1 eV^?1)		1.57	7.05	7.98	9

DownLoad: CSV

[1]	Hamdoune A. Elaboration du nitrure de gallium, étude de ses propriétés et applications. Thesis of Doctorate, University of Abou-Bakr Belkaid, Tlemcen, Algeria, 2006
[2]	Nakamura S. III-V nitride based light-emitting devices. Solid State Communications, 1997. 102: 237 doi: 10.1016/S0038-1098(96)00722-3
[3]	Masui H, Nakamura S, DenBaars S P, et al. Nonpolar and semipolar III-nitride light-emitting diodes: achievements and challenges. IEEE Trans Electron Devices, 2010, 57: 88 doi: 10.1109/TED.2009.2033773
[4]	Hu H P, Zhou S J, Liu X T, et al. Effects of GaN/AlGaN/sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes. J Scientific Reports, 2017, 7, 44627 doi: 10.1038/srep44627
[5]	Kneissl M, Kolbe T, Chua C, et al. Advances in group III-nitride-based deep UV light-emitting diode technology. J Semicond Sci Technol 2011, 26 , 014036 doi: 10.1088/0268-1242/26/1/014036
[6]	Kneissl M, Rass J. III nitride ultraviolet emitters. Springer Series in Materials Science 2016, 227, 1
[7]	Khan A, Balakrishnan K, Katona T. Ultraviolet light-emitting diodes based on group three nitrides. J Nat Photonics 2008, 2, 77 doi: 10.1038/nphoton.2007.293
[8]	Nakamura S, Krames M R. History of gallium-nitride-based light-emitting diodes for illumination. Proc IEEE, 2013, 101(10), 2211 doi: 10.1109/JPROC.2013.2274929
[9]	Verzellesi G , Saguatti D, Meneghini M, et al. Efficiency droop in InGaN/GaN blue light-emitting diodes: physic mechanisms remedies. J Appl Phys 2013, 114(7), 071101. doi: 10.1063/1.4816434
[10]	Yang W, Wang W, Lin Y, et al. Deposition of nonpolar mplane InGaN/GaN multiple quantum wells on LiGaO+(100) substrates. J Mater Chem C 2014, 2(5), 801 doi: 10.1039/C3TC31935K
[11]	Schubert M F, Xu J, Kim J K, et al. Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Appl Phys Lett. 2008, 93(4), 041102. doi: 10.1063/1.2963029
[12]	Lin Z T, Wang H Y, Wang W L, et al. Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs. J Opt Express, 2016, 24, 11886. doi: 10.1364/OE.24.011885
[13]	Hirayama H, Fujikawa S, Noguchi N, et al. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. J Phys Status Solidi A, 2009, 206, 1176 doi: 10.1002/pssa.v206:6
[14]	Takano T, Fujikawa S, Kondo Y, et al. Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. J Phys Status Solidi C, 2008, 5, 2102 doi: 10.1002/(ISSN)1610-1642
[15]	Lin Z T, Wang H T, Lin Y H, et al. Stress management on underlying GaN-based epitaxial films: A new vision for achieving high-performance LEDs on Si substrates. J Appl Phys, 2017, 122, 204503. doi: 10.1063/1.4993985
[16]	Meel K, Mahala P, Singh S. Design and fabrication of multi quantum well based GaN/InGaN blue LED. IOP Conf Ser: Mater Sci Eng, 2018, 331, 012008 doi: 10.1088/1757-899X/331/1/012008
[17]	Gautier S, Patriarche G, Moudakir T. Deep structural analysis of novel BGaN material layers grown by MOVPE. J Cryst Growth 2011, 315, 288 doi: 10.1016/j.jcrysgro.2010.08.042
[18]	Pease R S. An X-ray study of boron nitride. Acta Crystallogr. 1952, 5, 356. doi: 10.1107/S0365110X52001064
[19]	Herold A, Marzluf B, Perio P, et al. Inorganic reactions and methods. Formation of Ceramics Seances Acad Sci 1958, 246, 1866
[20]	Thomas J, Weston N E, O’connor T, et al. Boron nitride, thermal transformation to ordered-layer-lattice boron nitride. J Am Chem Soc 1962, 84, 4619. doi: 10.1021/ja00883a001
[21]	Wentorf R Jr. Cubic form of boron nitride. J Chem Phys, 1957, 26, 956. doi: 10.1063/1.1745964
[22]	Wentorf R Jr. Synthesis of the cubic form of boron nitride. J Chem Phys. 1961, 34, 809. doi: 10.1063/1.1731679
[23]	Tsao J Y, Chowdhury S, Hollis M A, et al. Ultrawide-bandgap semiconductors: research opportunities and challenges. J Adv Electron Mater. 2018, 4, 1600501 doi: 10.1002/aelm.201600501
[24]	Zhang X. Thin solid films electronic and photonic applications, 2013, 544, 2. doi: 10.1016/j.tsf.2013.07.001
[25]	Dreyer C E, Lyons J L, Janotti A, et al. Band alignments and polarization properties of BN polymorphs. Appl Phys Express, 2014, 7, 031001. doi: 10.7567/APEX.7.031001
[26]	Gunning B P, Moseley M W, Koleske D D, et al. Phase degradation in B_xGa_1-xN films grown at low temperature by metalorganic vapor phase epitaxy. J Cryst Growth, 2017, 464, 190. doi: 10.1016/j.jcrysgro.2016.10.054
[27]	Ougazzaden A, Gautier S, Moudakir T. Band gap bowing in BGaN thin films. Appl Phys Lett, 2008, 93, 083118 doi: 10.1063/1.2977588
[28]	Atlas User’s Manual; Silvaco International Inc. Santa Clara, CA, USA. Version: 2012
[29]	Lachebi A, Abid H, DrizMand Al-Douri Y. First-principles study of cubic B_xGa_1–xN alloys. Int J Nanoelectron, 2008, 1, 81 doi: 10.3906/.z-0902-3
[30]	Schubert E F. Light-emitting diodes. 2nd ed. Cambridge University Press, 2006, 432
[31]	Ambacher O, Dimitrov R, Stutzmann M, et al. Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices. J Phys Stat Sol, 1999, 216, 381 doi: 10.1002/(ISSN)1521-3951

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 5002 Times PDF downloads: 205 Times Cited by: 0 Times

History

Received: 04 May 2018 Revised: 08 June 2018 Online: Accepted Manuscript: 11 January 2019Uncorrected proof: 11 January 2019Published: 01 March 2019

The objective of this work is to simulate a single quantum well ultraviolet light emitting diode (LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quantum well taken between two layers, of n-AlGaN and p-AlGaN. The second one has a BGaN quantum well instead of GaN. We fix the concentration of the boron in BGaN to only 1% and we vary the thickness of GaN and BGaN quantum well layer from 7 to 20 nm, for the two structures. As results, we obtain respectively for GaN-LED and BGaN-LED, a maximum current of 0.52 and 0.27 mA, a maximum power spectral density of 1.935 and 6.7 W cm^?1 eV^?1, a maximum spontaneous emission of 3.34 × 10²⁸ and 3.43 × 10²⁸ s^?1 cm^?3 eV^?1, and a maximum Light output power of 0.56 and 0.89 mW.

香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

DOI: 10.1088/1674-4926/40/3/032802

Abstract

References

Proportional views

Catalog

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

DOI: 10.1088/1674-4926/40/3/032802

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content