β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

Jiaqi Wei; Kumsong Kim; Fang Liu; Ping Wang; Xiantong Zheng; Zhaoying Chen; Ding Wang; Ali Imran; Xin Rong; Xuelin Yang; Fujun Xu; Jing Yang; Bo Shen; Xinqiang Wang

doi:10.1088/1674-4926/40/1/012802

J. Semicond. > 2019, Volume 40?>?Issue 1?> 012802

ARTICLES

β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

Jiaqi Wei, Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen and Xinqiang Wang

+ Author Affiliations

Corresponding author: Xinqiang Wang, Email: wangshi@pku.edu.cn

DOI: 10.1088/1674-4926/40/1/012802

Abstract: Monoclinic gallium oxide (Ga₂O₃) has been grown on (0001) sapphire (Al₂O₃) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010]( $\bar{2}01$ ) β-Ga₂O₃||[ $01\bar{1}0$ ](0001)Al₂O₃ via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω-rocking curve of ( $\bar{2}01$ ) plane and root mean square (RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C, respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair (DAP).

Key words: β-Ga₂O₃, sapphire substrate, PA-MBE, crystalline quality, CL measurement

References

[1]	Guo D, Wu Z, Li P, et al. Fabrication of β-Ga₂O₃ thin films and solar-blind photodetectors by laser MBE technology. Opt Mater Express, 2014, 4(5): 1067 doi: 10.1364/OME.4.001067
[2]	Mu W, Jia Z, Yin Y, et al. High quality crystal growth and anisotropic physical characterization of β-Ga₂O₃ single crystals grown by EFG method. J Alloys Compd, 2017, 714: 453 doi: 10.1016/j.jallcom.2017.04.185
[3]	Pearton S J, Yang J, Patrick C, et al. A review of Ga₂O₃ materials, processing, and devices. Appl Phys Rev, 2018, 5(1): 011301 doi: 10.1063/1.5006941
[4]	Xue H, He Q, Jian G, et al. An overview of the ultrawide bandgap Ga₂O₃ semiconductor-based schottky barrier diode for power electronics application. Nanoscale Res Lett, 2018 13: 290 doi: 10.1186/s11671-018-2712-1
[5]	Zhao X, Cui W, Wu Z, et al. Growth and characterization of Sn doped β-Ga₂O₃ thin films and enhanced performance in a solar-blind photodetector. J Electron Mater, 2017, 46(4): 2366 doi: 10.1007/s11664-017-5291-5
[6]	Kumar S S, Rubio E J, Noor-A-Alam M, et al. Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films. J Phys Chem C, 2013, 117(8): 4194 doi: 10.1021/jp311300e
[7]	Farzana E, Ahmadi E, Speck J S, et al. Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2018, 123(16): 1
[8]	Hu Z, Zhou H, Feng Q, et al. Field-plated lateral β-Ga₂O₃ schottky barrier diode with high reverse blocking voltage of more than 3 kV and high DC power figure-of-merit of 500 MW/cm². IEEE Electron Device Lett, 2018, 39(10): 1564
[9]	Higashiwaki M, Sasaki K, Kuramata A, et al. Development of gallium oxide power devices. Phys Status Solidi, 2014, 211(1): 21 doi: 10.1002/pssa.201330197
[10]	Galazka Z. β-Ga₂O₃ for wide-bandgap electronics and optoelectronics. Semicond Sci Technol, 2018, 33, 113001 doi: 10.1088/1361-6641/aadf78
[11]	Kumar S, Tessarek C, Christiansen S, et al. A comparative study of β-Ga₂O₃ nanowires grown on different substrates using CVD technique. J Alloys Compd, 2014, 587: 812 doi: 10.1016/j.jallcom.2013.10.165
[12]	Rafique S, Han L, Neal A T, et al. Towards high mobility heteroepitaxial β-Ga₂O₃ on sapphire-dependence on the substrate off-axis angle. Phys Status Solidi, 2018, 215(2): 1700467 doi: 10.1002/pssa.v215.2
[13]	E G Víllora, Shimamura K, Yoshikawa Y, et al. Large-size β-Ga₂O₃ single crystals and wafers. J Cryst Growth, 2004, 270(3/4): 420
[14]	Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47(11R): 8506
[15]	Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga₂O₃ (001) Schottky barrier diodes fabricated on n-Ga₂O₃ drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 133503 doi: 10.1063/1.4945267
[16]	Sinha G, Adhikar K, Chaudhuri S, et al. Sol-gel derived phase pure α-Ga₂O₃ nanocrystalline thin film and its optical properties. J Cryst Growth, 2005, 276(1): 204
[17]	Kokubun Y, Miura K, Endo F, et al. Sol-gel prepared β-Ga₂O₃ thin films for ultraviolet photodetectors. Appl Phys Lett, 2007, 90(3): A316
[18]	Fleischer M, Hanrieder W, Meixner H. Stability of semiconducting gallium oxide thin films. Thin Solid Films, 1990, 190: 93 doi: 10.1016/0040-6090(90)90132-W
[19]	Liu J J, Yan J L, Shi L, et al. Electrical and optical properties of deep ultraviolet transparent conductive Ga₂O₃/ITO films by magnetron sputtering. J Semicond, 2010. 31: 103001. doi: 10.1088/1674-4926/31/10/103001
[20]	Ji Z, Du J, Fan J, et al. Gallium oxide films for filter and solar-blind UV detector. Opt Mater, 2006, 28(4): 415 doi: 10.1016/j.optmat.2005.03.006
[21]	Fleischer M, Hanrieder W, Meixner H. Stability of semiconducting gallium oxide thin films. Thin Solid Films, 2015, 190(1): 93
[22]	Lv Y, Ma J, Mi W, et al. Characterization of β-Ga₂O₃ thin films on sapphire (0001) using metal-organic chemical vapor deposition technique. Vacuum, 2012, 86(12): 1850 doi: 10.1016/j.vacuum.2012.04.019
[23]	Hayashi H, Huang R, Oba F, et al. Epitaxial growth of Mn-doped γ-Ga₂O₃ on spinel substrate. J Mater Res, 2011, 26(4): 578 doi: 10.1557/jmr.2010.32
[24]	Matsuzaki K, Hiramatsu H, Nomura K, et al. Growth, structure and carrier transport properties of Ga₂O₃ epitaxial film examined for transparent field-effect transistor. Thin Solid Films, 2006, 496(1): 37 doi: 10.1016/j.tsf.2005.08.187
[25]	Zhang F, Saito K, Tanaka T, et al. Electrical properties of Si doped Ga₂O₃ films grown by pulsed laser deposition. J Mater Sci: Mater Electron, 2015, 26(12): 9624 doi: 10.1007/s10854-015-3627-6
[26]	Oshima T, Okuno T, Fujita S. Ga₂O₃ thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors. Jpn J Appl Phys, 2007, 46(11): 7217 doi: 10.1143/JJAP.46.7217
[27]	Nakagomi S, Kokubun Y. Crystal orientation of β-Ga₂O₃ thin films formed on c-plane and a-plane sapphire substrate. J Cryst Growth, 2012, 349(1): 12 doi: 10.1016/j.jcrysgro.2012.04.006
[28]	Zhang Y, Joishi C, Xia Z, et al. Demonstration of β-(Al_xGa_1?x)₂O₃/Ga₂O₃ double heterostructure field effect transistors. Appl Phys Lett, 2018, 112(23): 233503 doi: 10.1063/1.5037095
[29]	Zhang F B, Saito K, Tanaka T, et al. Structural and optical properties of Ga₂O₃, films on sapphire substrates by pulsed laser deposition. J Cryst Growth, 2014, 387(2): 96
[30]	Huang L, Feng Q, Han G, et al. Comparison study of β-Ga₂O₃ photodetectors grown on sapphire at different oxygen pressures. IEEE Photonics J, 2017, 9(4): 1
[31]	Cheng Z, Hanke M, Vogt P, et al. Phase formation and strain relaxation of Ga₂O₃ on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction. Appl Phys Lett, 2017, 111(16): 162104 doi: 10.1063/1.4998804
[32]	Villora E G, Shimamura K, Kitamura K, et al. Rf-plasma-assisted molecular-beam epitaxy of β-Ga₂O₃. Appl Phys Lett, 2006, 88(3): 841
[33]	Vogt P, Bierwagen O. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga₂O₃: Incorporation of Ga vs. Ga₂O desorption. Appl Phys Lett, 2016, 108(7): 024001
[34]	Ravadgar P, Horng R H, Yao S D, et al. Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers. Opt Express, 2013, 21(21): 24599 doi: 10.1364/OE.21.024599
[35]	Guzmán-Navarro G, Herrera-Zaldívar M, Valenzuela-Benavides J, et al. CL study of blue and UV emissions in β-Ga₂O₃ nanowires grown by thermal evaporation of GaN. J Appl Phys, 2011, 110(3): 033517 doi: 10.1063/1.3610386
[36]	Yu D P, Bubendorff J L, Zhou J F, et al. Localized cathodoluminescence investigation on single Ga₂O₃ nanoribbon/nanowire. Solid State Commun, 2002, 124(10/11): 417
[37]	Hao J, Cocivera M. Optical and luminescent properties of undoped and rare-earth-doped Ga₂O₃ thin films deposited by spray pyrolysis. J Phys D Appl Phys, 2002, 35(5): 433 doi: 10.1088/0022-3727/35/5/304

Fig. 1. (Color online) (a) RHEED patterns before and after the deposition of β-Ga₂O₃ films. (b) XRD in-plane ? scan for the β-Ga₂O₃ film grown at substrate temperature of 630 °C.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) A growth diagram for the Ga₂O₃ MBE growth. The Ga flux dependent growth rate of Ga₂O₃ grown at different temperatures.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) XRD patterns of Ga₂O₃ films deposited on (0001) sapphire substrates with different substrate temperatures. (b) The growth temperature dependent FWHM of XRD ω-scan for ( $\bar{2}01$ ) plane of Ga₂O₃ films.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) XRD 2θ–ω scan of Ga₂O₃/ Al₂O₃ grown at 630 °C. (b) Surface morphology investigated by AFM in a scanned area of 3 × 3 μm².

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) AFM surface morphology of β-Ga₂O₃ deposited at different substrate temperatures. (a) 630 °C. (b) 680 °C. (c) 730 °C. (d) 780 °C.

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) RT-CL spectra of (a) 400-nm-thick β-Ga₂O₃ film, (b) cross sectional β-Ga₂O₃ thin film, (c) Al₂O₃ substrate.

DownLoad: Full-Size Img PowerPoint

[1]	Guo D, Wu Z, Li P, et al. Fabrication of β-Ga₂O₃ thin films and solar-blind photodetectors by laser MBE technology. Opt Mater Express, 2014, 4(5): 1067 doi: 10.1364/OME.4.001067
[2]	Mu W, Jia Z, Yin Y, et al. High quality crystal growth and anisotropic physical characterization of β-Ga₂O₃ single crystals grown by EFG method. J Alloys Compd, 2017, 714: 453 doi: 10.1016/j.jallcom.2017.04.185
[3]	Pearton S J, Yang J, Patrick C, et al. A review of Ga₂O₃ materials, processing, and devices. Appl Phys Rev, 2018, 5(1): 011301 doi: 10.1063/1.5006941
[4]	Xue H, He Q, Jian G, et al. An overview of the ultrawide bandgap Ga₂O₃ semiconductor-based schottky barrier diode for power electronics application. Nanoscale Res Lett, 2018 13: 290 doi: 10.1186/s11671-018-2712-1
[5]	Zhao X, Cui W, Wu Z, et al. Growth and characterization of Sn doped β-Ga₂O₃ thin films and enhanced performance in a solar-blind photodetector. J Electron Mater, 2017, 46(4): 2366 doi: 10.1007/s11664-017-5291-5
[6]	Kumar S S, Rubio E J, Noor-A-Alam M, et al. Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films. J Phys Chem C, 2013, 117(8): 4194 doi: 10.1021/jp311300e
[7]	Farzana E, Ahmadi E, Speck J S, et al. Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2018, 123(16): 1
[8]	Hu Z, Zhou H, Feng Q, et al. Field-plated lateral β-Ga₂O₃ schottky barrier diode with high reverse blocking voltage of more than 3 kV and high DC power figure-of-merit of 500 MW/cm². IEEE Electron Device Lett, 2018, 39(10): 1564
[9]	Higashiwaki M, Sasaki K, Kuramata A, et al. Development of gallium oxide power devices. Phys Status Solidi, 2014, 211(1): 21 doi: 10.1002/pssa.201330197
[10]	Galazka Z. β-Ga₂O₃ for wide-bandgap electronics and optoelectronics. Semicond Sci Technol, 2018, 33, 113001 doi: 10.1088/1361-6641/aadf78
[11]	Kumar S, Tessarek C, Christiansen S, et al. A comparative study of β-Ga₂O₃ nanowires grown on different substrates using CVD technique. J Alloys Compd, 2014, 587: 812 doi: 10.1016/j.jallcom.2013.10.165
[12]	Rafique S, Han L, Neal A T, et al. Towards high mobility heteroepitaxial β-Ga₂O₃ on sapphire-dependence on the substrate off-axis angle. Phys Status Solidi, 2018, 215(2): 1700467 doi: 10.1002/pssa.v215.2
[13]	E G Víllora, Shimamura K, Yoshikawa Y, et al. Large-size β-Ga₂O₃ single crystals and wafers. J Cryst Growth, 2004, 270(3/4): 420
[14]	Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga₂O₃ single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47(11R): 8506
[15]	Higashiwaki M, Konishi K, Sasaki K, et al. Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga₂O₃ (001) Schottky barrier diodes fabricated on n-Ga₂O₃ drift layers grown by halide vapor phase epitaxy. Appl Phys Lett, 2016, 108(13): 133503 doi: 10.1063/1.4945267
[16]	Sinha G, Adhikar K, Chaudhuri S, et al. Sol-gel derived phase pure α-Ga₂O₃ nanocrystalline thin film and its optical properties. J Cryst Growth, 2005, 276(1): 204
[17]	Kokubun Y, Miura K, Endo F, et al. Sol-gel prepared β-Ga₂O₃ thin films for ultraviolet photodetectors. Appl Phys Lett, 2007, 90(3): A316
[18]	Fleischer M, Hanrieder W, Meixner H. Stability of semiconducting gallium oxide thin films. Thin Solid Films, 1990, 190: 93 doi: 10.1016/0040-6090(90)90132-W
[19]	Liu J J, Yan J L, Shi L, et al. Electrical and optical properties of deep ultraviolet transparent conductive Ga₂O₃/ITO films by magnetron sputtering. J Semicond, 2010. 31: 103001. doi: 10.1088/1674-4926/31/10/103001
[20]	Ji Z, Du J, Fan J, et al. Gallium oxide films for filter and solar-blind UV detector. Opt Mater, 2006, 28(4): 415 doi: 10.1016/j.optmat.2005.03.006
[21]	Fleischer M, Hanrieder W, Meixner H. Stability of semiconducting gallium oxide thin films. Thin Solid Films, 2015, 190(1): 93
[22]	Lv Y, Ma J, Mi W, et al. Characterization of β-Ga₂O₃ thin films on sapphire (0001) using metal-organic chemical vapor deposition technique. Vacuum, 2012, 86(12): 1850 doi: 10.1016/j.vacuum.2012.04.019
[23]	Hayashi H, Huang R, Oba F, et al. Epitaxial growth of Mn-doped γ-Ga₂O₃ on spinel substrate. J Mater Res, 2011, 26(4): 578 doi: 10.1557/jmr.2010.32
[24]	Matsuzaki K, Hiramatsu H, Nomura K, et al. Growth, structure and carrier transport properties of Ga₂O₃ epitaxial film examined for transparent field-effect transistor. Thin Solid Films, 2006, 496(1): 37 doi: 10.1016/j.tsf.2005.08.187
[25]	Zhang F, Saito K, Tanaka T, et al. Electrical properties of Si doped Ga₂O₃ films grown by pulsed laser deposition. J Mater Sci: Mater Electron, 2015, 26(12): 9624 doi: 10.1007/s10854-015-3627-6
[26]	Oshima T, Okuno T, Fujita S. Ga₂O₃ thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors. Jpn J Appl Phys, 2007, 46(11): 7217 doi: 10.1143/JJAP.46.7217
[27]	Nakagomi S, Kokubun Y. Crystal orientation of β-Ga₂O₃ thin films formed on c-plane and a-plane sapphire substrate. J Cryst Growth, 2012, 349(1): 12 doi: 10.1016/j.jcrysgro.2012.04.006
[28]	Zhang Y, Joishi C, Xia Z, et al. Demonstration of β-(Al_xGa_1?x)₂O₃/Ga₂O₃ double heterostructure field effect transistors. Appl Phys Lett, 2018, 112(23): 233503 doi: 10.1063/1.5037095
[29]	Zhang F B, Saito K, Tanaka T, et al. Structural and optical properties of Ga₂O₃, films on sapphire substrates by pulsed laser deposition. J Cryst Growth, 2014, 387(2): 96
[30]	Huang L, Feng Q, Han G, et al. Comparison study of β-Ga₂O₃ photodetectors grown on sapphire at different oxygen pressures. IEEE Photonics J, 2017, 9(4): 1
[31]	Cheng Z, Hanke M, Vogt P, et al. Phase formation and strain relaxation of Ga₂O₃ on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction. Appl Phys Lett, 2017, 111(16): 162104 doi: 10.1063/1.4998804
[32]	Villora E G, Shimamura K, Kitamura K, et al. Rf-plasma-assisted molecular-beam epitaxy of β-Ga₂O₃. Appl Phys Lett, 2006, 88(3): 841
[33]	Vogt P, Bierwagen O. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga₂O₃: Incorporation of Ga vs. Ga₂O desorption. Appl Phys Lett, 2016, 108(7): 024001
[34]	Ravadgar P, Horng R H, Yao S D, et al. Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers. Opt Express, 2013, 21(21): 24599 doi: 10.1364/OE.21.024599
[35]	Guzmán-Navarro G, Herrera-Zaldívar M, Valenzuela-Benavides J, et al. CL study of blue and UV emissions in β-Ga₂O₃ nanowires grown by thermal evaporation of GaN. J Appl Phys, 2011, 110(3): 033517 doi: 10.1063/1.3610386
[36]	Yu D P, Bubendorff J L, Zhou J F, et al. Localized cathodoluminescence investigation on single Ga₂O₃ nanoribbon/nanowire. Solid State Commun, 2002, 124(10/11): 417
[37]	Hao J, Cocivera M. Optical and luminescent properties of undoped and rare-earth-doped Ga₂O₃ thin films deposited by spray pyrolysis. J Phys D Appl Phys, 2002, 35(5): 433 doi: 10.1088/0022-3727/35/5/304

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 6811 Times PDF downloads: 339 Times Cited by: 0 Times

History

Received: 02 September 2018 Revised: 10 November 2018 Online: Accepted Manuscript: 10 December 2018Uncorrected proof: 10 December 2018Published: 07 January 2019

Monoclinic gallium oxide (Ga₂O₃) has been grown on (0001) sapphire (Al₂O₃) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010]( $\bar{2}01$ ) β-Ga₂O₃||[ $01\bar{1}0$ ](0001)Al₂O₃ via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω-rocking curve of ( $\bar{2}01$ ) plane and root mean square (RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C, respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair (DAP).

香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

DOI: 10.1088/1674-4926/40/1/012802

Abstract

References

Proportional views

Catalog

β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

β-Ga2O3 thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

DOI: 10.1088/1674-4926/40/1/012802

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content

β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy