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J. Semicond. > 2018, Volume 39?>?Issue 5?> 054005

SEMICONDUCTOR DEVICES

Asymmetric anode and cathode extraction structure fast recovery diode

Jiaqiang Xie1, Li Ma2, and Yong Gao1

+ Author Affiliations

 Corresponding author: Li Ma, Email: mali@xaut.edu.cn

DOI: 10.1088/1674-4926/39/5/054005

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Abstract: This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%.

Key words: asymmetric anode, cathode extraction, fast recovery diode



[1]
Padmanabhan K, Hu J, Zhang L, et al. A novel trench fast recovery diode with injection control. Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, 2014
[2]
Deng X C, Zhang B, Li Z J, et al. Modeling and characterization of a merged PiN Schottky diodes with semi-super junction structure. ICSICT, Shanghai, China, 2006: 281
[3]
Sawant S, Baliga B J. 4 kV merged PiN Schottky (MPS) rectifiers. Proceedings of 1998 International Symposium on Power Semiconductor Devices, 1998: 297
[4]
Rahimo M T, Shammas N Y A, et al. freewheeling diode reverse recovery failure modes in IGBT applications. IEEE Trans Industr Appl, 2001, 37: 661 doi: 10.1109/28.913734
[5]
Roman B, Josef L, Hans-Joachim S. A new diode structure with inverse injection dependency of emitter efficiency (IDEE). 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010: 165
[6]
Kitagawa M, Matsushita K, Nakagawa A. High voltage (4 kV) emitter short type diode (ESD). Proc ISPSD, 1992: 60
[7]
Matsushita K, Shinohe T, Tsukuda M, et al. 4.5 kV high speed and rugged planar diode with novel carrier distribution control. Proc ISPSD, 1998: 191
[8]
Pína L, Vobecky J. Fast recovery high-power P–i–N diode with heavily shorted cathode for enhanced ruggedness in the circuits with IGCTs. Proceedings of the 2016 28 th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016
[9]
Masuoka F, Nakamura K, Nishii A, et al. Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness. Proceedings of the 24th International Symposium on Power Semiconductor Devices and ICs, 2012
[10]
Matsudai T, Ogura T, Oshino Y, et al. Advanced cathode and anode injection control concept for 1200V SC (Schottky controlled injection)-diode. Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, 2014
[11]
DESSISISE, Manual, ISE Integrated System Engineering AG, ISE-TCAD, Zuerich, Switzerland
[12]
Kopta A, Rahimo M. The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005
[13]
Felsl H P, Falck E, Pfaffenlehner M, et al. The influence of bulk parameters on the switching behaviour of FWDs for traction application. Conf Proc Nis, Serbia, MIEL, 2004: 153
[14]
Mizushima T, Nemoto M, Kuribayashi H, et al. Inhibiting effect of middle broad buffer layer diode using hydrogen-related shallow donor on reverse recovery oscillation. Processing of the ISPSD, 2010: 115
[15]
Felsl H P, Heinze B, Lutz J. Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions. IEE Proc Circuits Devices Syst, 2006, 153(1): 11 doi: 10.1049/ip-cds:20050060
[16]
Fujii H, Inoue M, Hatade K, et al. A novel buffer structure and lifetime control technique with poly-Si for thin wafer diode. Proc ISPSD, 2009: 140
[17]
Baliga B J. Fundamentals of power semicondctor devices. Beijing: Science Press, 2012
Fig. 1.  The cross section: (a) the AA–CE diode, (b) the P–i–N diode.

Fig. 2.  The abrasive staining pictures of (a) AA–CE diode and (b) P–i–N diode.

Fig. 3.  (Color online) Reverse recovery characteristics comparison of the AA–CE diode and P–i–N diode. VDC = 1800 V, IF = Inom/5 = 32 A, Ls = 1.2 μH.

Fig. 4.  (Color online) The vertical distribution of hole density in reverse recovery process.

Fig. 5.  (Color online) The reverse I?V characteristics of the AA–CE diode and the P–i–N diode.

Fig. 6.  (Color online) The electric field distributions of the AA–CE diode and the P–i–N diode, at the reverse bias of 3000 V.

Fig. 7.  (Color online) On-state characteristics of the AA–CE diode and P–i–N diode.

Fig. 8.  (Color online) Carrier concentration distribution of the AA–CE diode and P–i–N diode.

Table 1.   The reverse recovery characteristic parameters.

Variable AA–CE diode P–i–N
diode (P–i–N)
Irrm (A) ?27.2 ?52
ts (ns) 112 204
tf (ns) 160 132
trr (ns) 272 336
S 1.4 0.6
DownLoad: CSV
[1]
Padmanabhan K, Hu J, Zhang L, et al. A novel trench fast recovery diode with injection control. Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, 2014
[2]
Deng X C, Zhang B, Li Z J, et al. Modeling and characterization of a merged PiN Schottky diodes with semi-super junction structure. ICSICT, Shanghai, China, 2006: 281
[3]
Sawant S, Baliga B J. 4 kV merged PiN Schottky (MPS) rectifiers. Proceedings of 1998 International Symposium on Power Semiconductor Devices, 1998: 297
[4]
Rahimo M T, Shammas N Y A, et al. freewheeling diode reverse recovery failure modes in IGBT applications. IEEE Trans Industr Appl, 2001, 37: 661 doi: 10.1109/28.913734
[5]
Roman B, Josef L, Hans-Joachim S. A new diode structure with inverse injection dependency of emitter efficiency (IDEE). 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010: 165
[6]
Kitagawa M, Matsushita K, Nakagawa A. High voltage (4 kV) emitter short type diode (ESD). Proc ISPSD, 1992: 60
[7]
Matsushita K, Shinohe T, Tsukuda M, et al. 4.5 kV high speed and rugged planar diode with novel carrier distribution control. Proc ISPSD, 1998: 191
[8]
Pína L, Vobecky J. Fast recovery high-power P–i–N diode with heavily shorted cathode for enhanced ruggedness in the circuits with IGCTs. Proceedings of the 2016 28 th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016
[9]
Masuoka F, Nakamura K, Nishii A, et al. Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness. Proceedings of the 24th International Symposium on Power Semiconductor Devices and ICs, 2012
[10]
Matsudai T, Ogura T, Oshino Y, et al. Advanced cathode and anode injection control concept for 1200V SC (Schottky controlled injection)-diode. Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, 2014
[11]
DESSISISE, Manual, ISE Integrated System Engineering AG, ISE-TCAD, Zuerich, Switzerland
[12]
Kopta A, Rahimo M. The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005
[13]
Felsl H P, Falck E, Pfaffenlehner M, et al. The influence of bulk parameters on the switching behaviour of FWDs for traction application. Conf Proc Nis, Serbia, MIEL, 2004: 153
[14]
Mizushima T, Nemoto M, Kuribayashi H, et al. Inhibiting effect of middle broad buffer layer diode using hydrogen-related shallow donor on reverse recovery oscillation. Processing of the ISPSD, 2010: 115
[15]
Felsl H P, Heinze B, Lutz J. Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions. IEE Proc Circuits Devices Syst, 2006, 153(1): 11 doi: 10.1049/ip-cds:20050060
[16]
Fujii H, Inoue M, Hatade K, et al. A novel buffer structure and lifetime control technique with poly-Si for thin wafer diode. Proc ISPSD, 2009: 140
[17]
Baliga B J. Fundamentals of power semicondctor devices. Beijing: Science Press, 2012

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    Received: 20 October 2017 Revised: 05 December 2017 Online: Accepted Manuscript: 10 February 2018Uncorrected proof: 03 April 2018Published: 01 May 2018

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      Jiaqiang Xie, Li Ma, Yong Gao. Asymmetric anode and cathode extraction structure fast recovery diode[J]. Journal of Semiconductors, 2018, 39(5): 054005. doi: 10.1088/1674-4926/39/5/054005 ****J Q Xie, L Ma, Y Gao. Asymmetric anode and cathode extraction structure fast recovery diode[J]. J. Semicond., 2018, 39(5): 054005. doi: 10.1088/1674-4926/39/5/054005.
      Citation:
      Jiaqiang Xie, Li Ma, Yong Gao. Asymmetric anode and cathode extraction structure fast recovery diode[J]. Journal of Semiconductors, 2018, 39(5): 054005. doi: 10.1088/1674-4926/39/5/054005 ****
      J Q Xie, L Ma, Y Gao. Asymmetric anode and cathode extraction structure fast recovery diode[J]. J. Semicond., 2018, 39(5): 054005. doi: 10.1088/1674-4926/39/5/054005.

      Asymmetric anode and cathode extraction structure fast recovery diode

      DOI: 10.1088/1674-4926/39/5/054005
      • 1.

        Xi'an University of Technology, Department of Electronic Engineering, Xi'an 710048, China

      • 2.

        Xi'an University of Technology, Department of Applied Physics, Xi'an 710048, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 51177133).

      More Information
      • Corresponding author: Email: mali@xaut.edu.cn
      • Received Date: 2017-10-20
      • Revised Date: 2017-12-05
      • Published Date: 2018-05-01

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