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J. Semicond. > 2017, Volume 38?>?Issue 7?> 074001

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SEMICONDUCTOR DEVICES

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Weiyi Li^{1, 2, #}, Zhili Zhang^{1, 2, #}, Kai Fu¹, Guohao Yu¹, Xiaodong Zhang¹, Shichuang Sun^{1, 3}, Liang Song^{1, 2}, Ronghui Hao^{1, 4}, Yaming Fan¹, Yong Cai¹ and Baoshun Zhang^{1, 5,}

+ Author Affiliations + Find other works by these authors

• 1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China
• 2. University of Chinese Academy of Sciences, Beijing 100049, ChinaUniversity of Chinese Academy of Sciences, Beijing 100049, China
• 3. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, ChinaWuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
• 4. Nanjing University of Science and Technology, school of materials science and engineering, Nanjing 210094, ChinaNanjing University of Science and Technology, school of materials science and engineering, Nanjing 210094, China
• 5. Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, ChinaSuzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China
• # These authors contributed equally to this work.# These authors contributed equally to this work.

• Weiyi Li
• Zhili Zhang
• Kai Fu
• Guohao Yu
• Xiaodong Zhang
• Shichuang Sun
• Liang Song
• Ronghui Hao
• Yaming Fan
• Yong Cai
• Baoshun Zhang

 Corresponding author: Baoshun Zhang,Email: bszhang2006@sinano.ac.cn

DOI: 10.1088/1674-4926/38/7/074001

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Abstract: We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.

Key words: GaN HEMT, enhancement-mode, electric field distribution, V_th instability

References

[1]	Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Trans Electron Devices, 2001, 48: 1515 doi: 10.1109/16.936500
[2]	Dong Z, Hao R, Zhang Z, et al. Impact of N-plasma treatment on the current collapse of ALGAN/GAN HEMTs. 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014: 1 http://ieeexplore.ieee.org/abstract/document/7021380
[3]	Wang Z, Zhou J, Kong Y, et al. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator. J Semicond, 2015, 36: 094004 doi: 10.1088/1674-4926/36/9/094004
[4]	Saito W, Takada Y, Kuraguchi M, et al. Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications. IEEE Trans Electron Devices, 2006, 53: 356 doi: 10.1109/TED.2005.862708
[5]	Xu Z, Wang J, Cai Y, et al. Enhancement mode (E-mode) AlGaN/GaN MOSFET with A/mm leakage current and ON/OFF current ratio. IEEE Electron Device Lett, 2014, 35: 1200 doi: 10.1109/LED.2014.2360541
[6]	Wang Y, Wang M, Xie B, et al. High-performance normally-off MOSFET using a wet etching-based gate recess technique. IEEE Electron Device Lett, 2013, 34: 1370 doi: 10.1109/LED.2013.2279844
[7]	Cai Y, Zhou Y, Lau K M, et al. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode. IEEE Trans Electron Devices, 2006, 53: 2207 doi: 10.1109/TED.2006.881054
[8]	Zhang Z, Fu K, Deng X, et al. Normally off AlGaN/GaN MIS-high-electron mobility transistors fabricated by using low pressure chemical vapor deposition Si3N4 gate dielectric and standard fluorine ion implantation. IEEE Electron Device Lett, 2015, 36: 1128 doi: 10.1109/LED.2015.2483760
[9]	Chen Y, Zheng X, Zhang J, et al. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment. J Semicond, 2016, 37: 055002 doi: 10.1088/1674-4926/37/5/055002
[10]	Uemoto Y, Hikita M, Ueno V, et al. Gate injection transistor (GIT)-a normally-off AlGaN/GaN power transistor using conductivity modulation. IEEE Trans Electron Devices, 2007, 54: 3393 doi: 10.1109/TED.2007.908601
[11]	Meneghesso G, Meneghini M, Zanoni E. Reliability and instabilities in GaN-based HEMTs. IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2014: 1 http://ieeexplore.ieee.org/document/7061275/
[12]	Yi C, Wang R, Huang W, et al. Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment. 2007 IEEE International Electron Devices Meeting, 2007: 389 http://ieeexplore.ieee.org/document/4418954/?reload=true&arnumber=4418954&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A4418848%29%26pageNumber%3D2%26rowsPerPage%3D100
[13]	Shockley W, Read W Jr. Statistics of the recombinations of holes and electrons. Phys Rev, 1952, 87: 835 doi: 10.1103/PhysRev.87.835
[14]	Hall R N. Electron--hole recombination in germanium. Phys Rev, 1952, 87: 387 doi: 10.1103/PhysRev.87.387
[15]	Caughey D M, Thomas R E. Carrier mobilities in silicon empirically related to doping and field. Proc IEEE, 1967, 55: 2192 doi: 10.1109/PROC.1967.6123
[16]	Piprek J. Semiconductor optoelectronic devices: introduction to physics and simulation. Academic Press, 2013
[17]	Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87: 334 doi: 10.1063/1.371866
[18]	Simmons J, Taylor G. Nonequilibrium steady-state statistics and associated effects for insulators and semiconductors containing an arbitrary distribution of traps. Phys Rev B, 1971, 4: 502 doi: 10.1103/PhysRevB.4.502
[19]	Wu T L, Marcon D, Bakeroot B, et al. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. Appl Phys Lett, 2015, 107: 4 https://biblio.ugent.be/publication/6972789/file/6972802.pdf
[20]	Zhang Z, Yu G, Zhang X, et al. Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer. IEEE Trans Electron Devices, 2016, 63: 731 doi: 10.1109/TED.2015.2510445
[21]	Meneghini M, Rossetto I, Bisi D, et al. Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs. IEEE Electron Device Lett, 2016, 37: 474 doi: 10.1109/LED.2016.2530693
[22]	Saito W, Kuraguchi M, Takada Y, et al. Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONAVB tradeoff characteristics. IEEE Trans Electron Devices, 2005, 52: 106 doi: 10.1109/TED.2004.841338

Fig. 1.  (a) Equivalent circuit of the proposed novel enhancement-mode GaN HEMT and (b)(c)(d) implementations of the proposed device.

DownLoad: Full-Size Img PowerPoint

Fig. 2.  Schematic cross-section of the (a) conventional E-mode HEMT with gate recess and (b) proposed novel E-mode HEMT.

DownLoad: Full-Size Img PowerPoint

Fig. 3.  Comparisons of DC characteristics of these two devices with (a) transfer characteristics and (b) outputs characteristics.

DownLoad: Full-Size Img PowerPoint

Fig. 4.  Schematic cross-section of electric field distribution of (a) conventional structure and (b) proposed structure at $V_{\mathrm{DS}} = 100$ V and $V_{\mathrm{GS}} =0$ V.

DownLoad: Full-Size Img PowerPoint

Fig. 5.  (a) Electric field distribution under gates for both structures at $V_{\mathrm{DS}} = 100$ V and $V_{\mathrm{GS}} =0$ V and (b) maximum electric field distribution near the gates for both structures.

DownLoad: Full-Size Img PowerPoint

Fig. 6.  (a) Relationship between the electric field distribution and the Si $_{\mathrm{3}}$ N $_{\mathrm{4}}$ thickness under the D-mode gate and (b) Electric field distribution with different distance between two gates at $V_{\mathrm{DS}} =100$ V and $V_{\mathrm{GS}} = 0$ V.

DownLoad: Full-Size Img PowerPoint

Fig. 7.  Distribution of the ionized traps of both structures at (a) original condition at $V_{\rm GS} = 0$ V and $V_{\rm DS} = 0 $ V and (b) after the 1 ms off-state stress and (c) after the 10 ms off-state stress.

DownLoad: Full-Size Img PowerPoint

Fig. 8.  Ionized traps' density for the AlGaN/Si $_3$ N $_4$ interface under gates of (a) conventional structure and (b) proposed dual-gate structure.

DownLoad: Full-Size Img PowerPoint

Fig. 9.  (a) Schematic cross-section of conventional gate recess device with source field plate and (b) Electric field distribution and density of ionized traps under the gate for the device with source field plate.

DownLoad: Full-Size Img PowerPoint

[1]	Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Trans Electron Devices, 2001, 48: 1515 doi: 10.1109/16.936500
[2]	Dong Z, Hao R, Zhang Z, et al. Impact of N-plasma treatment on the current collapse of ALGAN/GAN HEMTs. 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014: 1 http://ieeexplore.ieee.org/abstract/document/7021380
[3]	Wang Z, Zhou J, Kong Y, et al. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator. J Semicond, 2015, 36: 094004 doi: 10.1088/1674-4926/36/9/094004
[4]	Saito W, Takada Y, Kuraguchi M, et al. Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications. IEEE Trans Electron Devices, 2006, 53: 356 doi: 10.1109/TED.2005.862708
[5]	Xu Z, Wang J, Cai Y, et al. Enhancement mode (E-mode) AlGaN/GaN MOSFET with A/mm leakage current and ON/OFF current ratio. IEEE Electron Device Lett, 2014, 35: 1200 doi: 10.1109/LED.2014.2360541
[6]	Wang Y, Wang M, Xie B, et al. High-performance normally-off MOSFET using a wet etching-based gate recess technique. IEEE Electron Device Lett, 2013, 34: 1370 doi: 10.1109/LED.2013.2279844
[7]	Cai Y, Zhou Y, Lau K M, et al. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode. IEEE Trans Electron Devices, 2006, 53: 2207 doi: 10.1109/TED.2006.881054
[8]	Zhang Z, Fu K, Deng X, et al. Normally off AlGaN/GaN MIS-high-electron mobility transistors fabricated by using low pressure chemical vapor deposition Si3N4 gate dielectric and standard fluorine ion implantation. IEEE Electron Device Lett, 2015, 36: 1128 doi: 10.1109/LED.2015.2483760
[9]	Chen Y, Zheng X, Zhang J, et al. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment. J Semicond, 2016, 37: 055002 doi: 10.1088/1674-4926/37/5/055002
[10]	Uemoto Y, Hikita M, Ueno V, et al. Gate injection transistor (GIT)-a normally-off AlGaN/GaN power transistor using conductivity modulation. IEEE Trans Electron Devices, 2007, 54: 3393 doi: 10.1109/TED.2007.908601
[11]	Meneghesso G, Meneghini M, Zanoni E. Reliability and instabilities in GaN-based HEMTs. IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2014: 1 http://ieeexplore.ieee.org/document/7061275/
[12]	Yi C, Wang R, Huang W, et al. Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment. 2007 IEEE International Electron Devices Meeting, 2007: 389 http://ieeexplore.ieee.org/document/4418954/?reload=true&arnumber=4418954&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A4418848%29%26pageNumber%3D2%26rowsPerPage%3D100
[13]	Shockley W, Read W Jr. Statistics of the recombinations of holes and electrons. Phys Rev, 1952, 87: 835 doi: 10.1103/PhysRev.87.835
[14]	Hall R N. Electron--hole recombination in germanium. Phys Rev, 1952, 87: 387 doi: 10.1103/PhysRev.87.387
[15]	Caughey D M, Thomas R E. Carrier mobilities in silicon empirically related to doping and field. Proc IEEE, 1967, 55: 2192 doi: 10.1109/PROC.1967.6123
[16]	Piprek J. Semiconductor optoelectronic devices: introduction to physics and simulation. Academic Press, 2013
[17]	Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87: 334 doi: 10.1063/1.371866
[18]	Simmons J, Taylor G. Nonequilibrium steady-state statistics and associated effects for insulators and semiconductors containing an arbitrary distribution of traps. Phys Rev B, 1971, 4: 502 doi: 10.1103/PhysRevB.4.502
[19]	Wu T L, Marcon D, Bakeroot B, et al. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. Appl Phys Lett, 2015, 107: 4 https://biblio.ugent.be/publication/6972789/file/6972802.pdf
[20]	Zhang Z, Yu G, Zhang X, et al. Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer. IEEE Trans Electron Devices, 2016, 63: 731 doi: 10.1109/TED.2015.2510445
[21]	Meneghini M, Rossetto I, Bisi D, et al. Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs. IEEE Electron Device Lett, 2016, 37: 474 doi: 10.1109/LED.2016.2530693
[22]	Saito W, Kuraguchi M, Takada Y, et al. Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONAVB tradeoff characteristics. IEEE Trans Electron Devices, 2005, 52: 106 doi: 10.1109/TED.2004.841338

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Received: 04 August 2016 Revised: 11 January 2017 Online: Published: 01 July 2017

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Article Navigation >  Journal of Semiconductors  > 2017  >  38(7): 074001

Weiyi Li, Zhili Zhang, Kai Fu, Guohao Yu, Xiaodong Zhang, Shichuang Sun, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. Journal of Semiconductors, 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001 ****W Y Li, Z L Zhang, K Fu, G H Yu, X D Zhang, S C Sun, L Song, R H Hao, Y M Fan, Y Cai, B S Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. J. Semicond., 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001.

Citation:

Weiyi Li, Zhili Zhang, Kai Fu, Guohao Yu, Xiaodong Zhang, Shichuang Sun, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. Journal of Semiconductors, 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001 **** W Y Li, Z L Zhang, K Fu, G H Yu, X D Zhang, S C Sun, L Song, R H Hao, Y M Fan, Y Cai, B S Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. J. Semicond., 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001.

Weiyi Li, Zhili Zhang, Kai Fu, Guohao Yu, Xiaodong Zhang, Shichuang Sun, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. Journal of Semiconductors, 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001 ****W Y Li, Z L Zhang, K Fu, G H Yu, X D Zhang, S C Sun, L Song, R H Hao, Y M Fan, Y Cai, B S Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. J. Semicond., 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001.

Citation:

Weiyi Li, Zhili Zhang, Kai Fu, Guohao Yu, Xiaodong Zhang, Shichuang Sun, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. Journal of Semiconductors, 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001 **** W Y Li, Z L Zhang, K Fu, G H Yu, X D Zhang, S C Sun, L Song, R H Hao, Y M Fan, Y Cai, B S Zhang. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability[J]. J. Semicond., 2017, 38(7): 074001. doi: 10.1088/1674-4926/38/7/074001.

PDF( 6692 KB)

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

DOI: 10.1088/1674-4926/38/7/074001

• Weiyi Li^1,2,#, 
• Zhili Zhang^1,2,#, 
• Kai Fu¹, 
• Guohao Yu¹, 
• Xiaodong Zhang¹, 
• Shichuang Sun^1,3, 
• Liang Song^1,2, 
• Ronghui Hao^1,4, 
• Yaming Fan¹, 
• Yong Cai¹, 
• Baoshun Zhang^1,5, 

• 1.

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China

• 2.

  University of Chinese Academy of Sciences, Beijing 100049, China

• 3.

  Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

• 4.

  Nanjing University of Science and Technology, school of materials science and engineering, Nanjing 210094, China

• 5.

  Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, China

Funds:

the National Key Scientific Instrument and Equipment Development Projects of China 2013YQ470767

Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767)

Project supported by the Key Technologies Support Program of Jiangsu Province BE2013002-2

More Information

• Corresponding author: Baoshun Zhang,Email: bszhang2006@sinano.ac.cn
• Received Date: 2016-08-04
  
• Revised Date: 2017-01-11
• Published Date: 2017-07-01

Abstract

• Abstract

  We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.

   

  Keywords:
  • GaN HEMT, 
  • enhancement-mode, 
  • electric field distribution, 
  • V_th instability
FullText(HTML)
References(22)

• References

  [1]	Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Trans Electron Devices, 2001, 48: 1515 doi: 10.1109/16.936500
  [2]	Dong Z, Hao R, Zhang Z, et al. Impact of N-plasma treatment on the current collapse of ALGAN/GAN HEMTs. 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014: 1 http://ieeexplore.ieee.org/abstract/document/7021380
  [3]	Wang Z, Zhou J, Kong Y, et al. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator. J Semicond, 2015, 36: 094004 doi: 10.1088/1674-4926/36/9/094004
  [4]	Saito W, Takada Y, Kuraguchi M, et al. Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications. IEEE Trans Electron Devices, 2006, 53: 356 doi: 10.1109/TED.2005.862708
  [5]	Xu Z, Wang J, Cai Y, et al. Enhancement mode (E-mode) AlGaN/GaN MOSFET with A/mm leakage current and ON/OFF current ratio. IEEE Electron Device Lett, 2014, 35: 1200 doi: 10.1109/LED.2014.2360541
  [6]	Wang Y, Wang M, Xie B, et al. High-performance normally-off MOSFET using a wet etching-based gate recess technique. IEEE Electron Device Lett, 2013, 34: 1370 doi: 10.1109/LED.2013.2279844
  [7]	Cai Y, Zhou Y, Lau K M, et al. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode. IEEE Trans Electron Devices, 2006, 53: 2207 doi: 10.1109/TED.2006.881054
  [8]	Zhang Z, Fu K, Deng X, et al. Normally off AlGaN/GaN MIS-high-electron mobility transistors fabricated by using low pressure chemical vapor deposition Si3N4 gate dielectric and standard fluorine ion implantation. IEEE Electron Device Lett, 2015, 36: 1128 doi: 10.1109/LED.2015.2483760
  [9]	Chen Y, Zheng X, Zhang J, et al. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment. J Semicond, 2016, 37: 055002 doi: 10.1088/1674-4926/37/5/055002
  [10]	Uemoto Y, Hikita M, Ueno V, et al. Gate injection transistor (GIT)-a normally-off AlGaN/GaN power transistor using conductivity modulation. IEEE Trans Electron Devices, 2007, 54: 3393 doi: 10.1109/TED.2007.908601
  [11]	Meneghesso G, Meneghini M, Zanoni E. Reliability and instabilities in GaN-based HEMTs. IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2014: 1 http://ieeexplore.ieee.org/document/7061275/
  [12]	Yi C, Wang R, Huang W, et al. Reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment. 2007 IEEE International Electron Devices Meeting, 2007: 389 http://ieeexplore.ieee.org/document/4418954/?reload=true&arnumber=4418954&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A4418848%29%26pageNumber%3D2%26rowsPerPage%3D100
  [13]	Shockley W, Read W Jr. Statistics of the recombinations of holes and electrons. Phys Rev, 1952, 87: 835 doi: 10.1103/PhysRev.87.835
  [14]	Hall R N. Electron--hole recombination in germanium. Phys Rev, 1952, 87: 387 doi: 10.1103/PhysRev.87.387
  [15]	Caughey D M, Thomas R E. Carrier mobilities in silicon empirically related to doping and field. Proc IEEE, 1967, 55: 2192 doi: 10.1109/PROC.1967.6123
  [16]	Piprek J. Semiconductor optoelectronic devices: introduction to physics and simulation. Academic Press, 2013
  [17]	Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys, 2000, 87: 334 doi: 10.1063/1.371866
  [18]	Simmons J, Taylor G. Nonequilibrium steady-state statistics and associated effects for insulators and semiconductors containing an arbitrary distribution of traps. Phys Rev B, 1971, 4: 502 doi: 10.1103/PhysRevB.4.502
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• Fig. 1. (a) Equivalent circuit of the proposed novel enhancement-mode GaN HEMT and (b)(c)(d) implementations of the proposed device.
• Fig. 2. Schematic cross-section of the (a) conventional E-mode HEMT with gate recess and (b) proposed novel E-mode HEMT.
• Fig. 3. Comparisons of DC characteristics of these two devices with (a) transfer characteristics and (b) outputs characteristics.
• Fig. 4. Schematic cross-section of electric field distribution of (a) conventional structure and (b) proposed structure at $V_{\mathrm{DS}} = 100$ V and $V_{\mathrm{GS}} =0$ V.
• Fig. 5. (a) Electric field distribution under gates for both structures at $V_{\mathrm{DS}} = 100$ V and $V_{\mathrm{GS}} =0$ V and (b) maximum electric field distribution near the gates for both structures.
• Fig. 6. (a) Relationship between the electric field distribution and the Si $_{\mathrm{3}}$ N $_{\mathrm{4}}$ thickness under the D-mode gate and (b) Electric field distribution with different distance between two gates at $V_{\mathrm{DS}} =100$ V and $V_{\mathrm{GS}} = 0$ V.
• Fig. 7. Distribution of the ionized traps of both structures at (a) original condition at $V_{\rm GS} = 0$ V and $V_{\rm DS} = 0 $ V and (b) after the 1 ms off-state stress and (c) after the 10 ms off-state stress.
• Fig. 8. Ionized traps' density for the AlGaN/Si $_3$ N $_4$ interface under gates of (a) conventional structure and (b) proposed dual-gate structure.
• Fig. 9. (a) Schematic cross-section of conventional gate recess device with source field plate and (b) Electric field distribution and density of ionized traps under the gate for the device with source field plate.