SEMICONDUCTOR MATERIALS
Abstract: The p-type N-doped PbTiO3 with different doping concentrations have been studied by first-principles calculations. The charge density differences, band structures, density of states and optical properties have been investigated. After an oxygen atom is substituted by a nitrogen atom in the crystals, the valance bands move to high energy levels and the Fermi energy level gets into the top of the valance bands. Results show that the values of the band gaps are decreased and the stability is weakened when the N concentration increases. The 2.5 at% N-doped PbTiO3 shows the best p-type conductivity and the visible-light absorption can be enhanced most at this doping concentration, which is necessary in semiconductors or photocatalysts.
Key words: semiconductor doping, electric property, optical property, electronic structure
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Table 1. Geometry parameters,unit cell volumes and formation enthalpies of different concentrations of N-doped PbTiO$_{3}$.
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Article views: 2680 Times PDF downloads: 18 Times Cited by: 0 Times
Received: 07 February 2015 Revised: Online: Published: 01 September 2015
| Citation: |
Yinnü Zhao, Jinliang Yan. Effects of N concentration on electronic and optical properties of N-doped PbTiO3[J]. Journal of Semiconductors, 2015, 36(9): 093005. doi: 10.1088/1674-4926/36/9/093005
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Y Zhao, J L Yan. Effects of N concentration on electronic and optical properties of N-doped PbTiO3[J]. J. Semicond., 2015, 36(9): 093005. doi: 10.1088/1674-4926/36/9/093005.
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Project supported by the National Natural Science Foundation of China (No. 10974077) and the Innovation Project of Shandong Graduate Education, China (No. SDYY13093).
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