J. Semicond. > 2015, Volume 36?>?Issue 12?> 126002

SEMICONDUCTOR TECHNOLOGY

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

Shaohua Jia, Yuling Liu, Chenwei Wang and Chenqi Yan

+ Author Affiliations

 Corresponding author: Liu Yuling,Email:liuyl@jingling.com.cn

DOI: 10.1088/1674-4926/36/12/126002

PDF

Abstract: The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels off while the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.

Key words: hydrogen peroxide, passivation, dishing, alkaline, Cu CMP



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig1.  $E_{\rm corr}$ and $I_{\rm corr}$ of copper wafer in P2 electrolyte of different H$_{2}$O$_{2}$ concentration.

Fig2.  (Color online) Potential polarization curve in P2 electrolyte of different H$_{2}$O$_{2}$ concentrations.

Fig3.  Changes in anode current over corrosion time

Fig4.  Effect of various H$_{2}$O$_{2}$ content of P2 slurry on dishing.

Fig5.  Influence of various H$_{2}$O$_{2}$ content P2 slurry on the removal rate of Cu/Ta and the static corrosion rate of Cu.

Table 1.   The process conditions of CMP.

DownLoad: CSV

Table 2.   $E_{\rm corr}$ and $I_{\rm corr}$ of copper wafer in different H$_{2}$O$_{2}$ concentration P2 electrolytes.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3269 Times PDF downloads: 15 Times Cited by: 0 Times

    History

    Received: 23 March 2015 Revised: Online: Published: 01 December 2015

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Shaohua Jia, Yuling Liu, Chenwei Wang, Chenqi Yan. Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization[J]. Journal of Semiconductors, 2015, 36(12): 126002. doi: 10.1088/1674-4926/36/12/126002 ****S H Jia, Y L Liu, C W Wang, C Q Yan. Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization[J]. J. Semicond., 2015, 36(12): 126002. doi: 10.1088/1674-4926/36/12/126002.
      Citation:
      Shaohua Jia, Yuling Liu, Chenwei Wang, Chenqi Yan. Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization[J]. Journal of Semiconductors, 2015, 36(12): 126002. doi: 10.1088/1674-4926/36/12/126002 ****
      S H Jia, Y L Liu, C W Wang, C Q Yan. Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization[J]. J. Semicond., 2015, 36(12): 126002. doi: 10.1088/1674-4926/36/12/126002.

      Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

      DOI: 10.1088/1674-4926/36/12/126002

      • Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China

      Funds:

      Project supported by the Special Project Items No. 2 in National Long-Term Technology Development Plan, China(No. 2009ZX02308).

      More Information
      • Corresponding author: Liu Yuling,Email:liuyl@jingling.com.cn
      • Received Date: 2015-03-23
      • Accepted Date: 2015-05-28
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return