J. Semicond. > 2015, Volume 36?>?Issue 12?> 125001

SEMICONDUCTOR INTEGRATED CIRCUITS

Proton radiation effect of NPN-input operational amplifier under different bias conditions

Ke Jiang1, 2, 3, Wu Lu1, 2, , Qi Guo1, 2, Chengfa He1, 2, Xin Wang1, 2, 3, Muohan Liu1, 2, 3 and Xiaolong Li1, 2, 3

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 Corresponding author: Lu Wu,Email:Luwu@ms.xjb.ac.cn

DOI: 10.1088/1674-4926/36/12/125001

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Abstract: NPN-input bipolar operational amplifiers LM741 were irradiated with 60Co γ-ray, 3 MeV protons and 10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with 60Co γ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current(±Icc) is another parameter that is sensitive to proton radiation, 60Co γ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of 60Co γ-ray, 3 MeV and 10 MeV proton irradiation.

Key words: NPN input bipolar operational amplifier, proton radiation, different biases, radiation effect



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Fig1.  $\[\Delta {{I}_{\text{b}}}\]$ of LM741 versus total dose for 3 MeV proton irradiation at different bias conditions.

Fig2.  $\[\Delta {{I}_{\text{b}}}\]$ of LM741 versus total dose for 10 MeV proton irradiation at different bias conditions.

Fig3.  $\[\Delta {{I}_{\text{b}}}\]$ of LM741 versus total dose for $^{60}$Co-$\gamma$ irradiation at different bias conditions.

Fig4.  The cross sections of the emitter-base region for NPN transistors. (a) Zero emitter junction bias. (b) Forward emitter junction bias.

Fig5.  Electric field components due to emitter--base junction ($E_{\rm fr,J}$) and metal trace ($E_{\rm fr,m}$ )in NPN transistor.

Fig6.  $\[\Delta \pm {{I}_{\text{cc}}}\]$ of LM741 versus total dose for $^{60}$Co-$\gamma $ irradiation at different bias conditions.

Fig7.  $\[\Delta \pm {{I}_{\text{cc}}}\]$ of LM741 versus total dose for 3 MeV proton irradiation at different bias conditions.

Fig8.  $\[\Delta \pm {{I}_{\text{cc}}}\]$ of LM741 versus total dose for 10 MeV radiation irradiation at different bias conditions.

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Table 1.   Energy deposition of 1011 fluence proton irradiation.

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    Received: 07 March 2014 Revised: Online: Published: 01 December 2015

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      Ke Jiang, Wu Lu, Qi Guo, Chengfa He, Xin Wang, Muohan Liu, Xiaolong Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. Journal of Semiconductors, 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001 ****K Jiang, W Lu, Q Guo, C F He, X Wang, M O H Liu, X L Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. J. Semicond., 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001.
      Citation:
      Ke Jiang, Wu Lu, Qi Guo, Chengfa He, Xin Wang, Muohan Liu, Xiaolong Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. Journal of Semiconductors, 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001 ****
      K Jiang, W Lu, Q Guo, C F He, X Wang, M O H Liu, X L Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. J. Semicond., 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001.

      Proton radiation effect of NPN-input operational amplifier under different bias conditions

      DOI: 10.1088/1674-4926/36/12/125001

      • Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

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      • Corresponding author: Lu Wu,Email:Luwu@ms.xjb.ac.cn
      • Received Date: 2014-03-07
      • Accepted Date: 2014-07-07
      • Published Date: 2015-01-25

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