SEMICONDUCTOR DEVICES
Yang Huang1, Yue Xu1, 2, and Yufeng Guo1, 2
Corresponding author: Xu Yue,Email:yuex@njupt.edu.cn
Abstract: Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices(VHDs) with four contacts and six contacts are asymmetrical in structural design but symmetrical in the current flow that can be well fit for the spinning current technique for offset elimination. In this article, a conformal mapping calculation method is used to predict the performance of asymmetrical VHD embedded in a deep n-well with four contacts. Furthermore, to make the calculation more accurate, the junction field effect is also involved into the conformal mapping method. The error between calculated and simulated results is less than 5% for the current-related sensitivity, and approximately 13% for the voltage-related sensitivity. This proves that such calculations can be used to predict the optimal structure of the vertical Hall-devices.
Key words: conformal mapping technique, vertical Hall device, geometry factor, magnetic sensitivity
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Article views: 3215 Times PDF downloads: 35 Times Cited by: 0 Times
Received: 16 April 2015 Revised: Online: Published: 01 December 2015
| Citation: |
Yang Huang, Yue Xu, Yufeng Guo. Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J]. Journal of Semiconductors, 2015, 36(12): 124006. doi: 10.1088/1674-4926/36/12/124006
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Y Huang, Y Xu, Y F Guo. Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique[J]. J. Semicond., 2015, 36(12): 124006. doi: 10.1088/1674-4926/36/12/124006.
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Project supported by the Natural Science Foundation of Jiangsu Province, China(Nos. BK20131379, BK20141431) and the Graduate Research and Innovation Projects of Jiangsu Province(No. SJLX_0373).
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