Fig. 1.
(Color online) (a) Image of prepared β-Ga2O3 full-wave bridge rectifier; (b) structure diagram of the rectifier; (c) equivalent circuit diagram; (d) enlarged schematic diagram of SBD.
ARTICLES
Haifeng Chen1, , Yuduo Zhang1, Xiexin Sun1, Jingguo Zong2, Qin Lu1, Yifan Jia1, Zhenfu Feng1, Zhan Wang1, Lijun Li1, Xiangtai Liu1, Shaoqing Wang1 and Yue Hao3
Corresponding author: Haifeng Chen, chenhaifeng@xupt.edu.cn
Abstract: A monolithic integrated full-wave bridge rectifier consisted of horizontal Schottky-barrier diodes (SBD) is prepared based on 100 nm ultra-thin β-Ga2O3 and demonstrated the solar-blind UV (SUV) light-modulated characteristics. Under SUV light illumination, the rectifier has the excellent full-wave rectification characteristics for the AC input signals of 5, 12, and 24 V with different frequencies. Further, experimental results confirmed the feasibility of continuously tuning the rectified output through SUV light-encoding. This work provides valuable insights for the development of optically programmable Ga2O3 AC-DC converters.
Key words: β-Ga2O3, Schottky-barrier diode, full-wave bridge rectifier, solar-blind UV
| [1] |
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100(1): 013504 doi: 10.1063/1.3674287
|
| [2] |
Higashiwaki M, Sasaki K, Kamimura T, et al. Depletion-mode Ga2O3 metal–oxide–semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Appl Phys Lett, 2013, 103(12): 123511 doi: 10.1063/1.4821858
|
| [3] |
Ahmadi E, Oshima Y. Materials issues and devices of α- and β-Ga2O3. J Appl Phys, 2019, 126(16): 160901 doi: 10.1063/1.5123213
|
| [4] |
Sasaki K, Kuramata A, Masui T, et al. Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy. Appl Phys Express, 2012, 5(3): 035502 doi: 10.1143/APEX.5.035502
|
| [5] |
Ji M, Taylor NR, Kravchenko I, et al. Demonstration of large-size vertical Ga2O3 Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36: 41
|
| [6] |
Wang C, Zhang J, Xu S, et al. Progress in state-of-the-art technologies of Ga2O3 devices. J Phys D: Appl Phys, 2021, 54(24): 243001 doi: 10.1088/1361-6463/abe158
|
| [7] |
Hu Z, Zhao C, Feng Q, et al. The investigation of β-Ga2O3 Schottky diode with floating field ring termination and the interface states. ECS J Solid State Sci Technol, 2020, 9(2): 025001 doi: 10.1149/2162-8777/ab6162
|
| [8] |
Roy S, Bhattacharyya A, Ranga P, et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 2021, 42(8): 1140 doi: 10.1109/LED.2021.3089945
|
| [9] |
Roy S, Bhattacharyya A, Peterson C, et al. 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate. Appl Phys Lett, 2023, 122(15): 152101 doi: 10.1063/5.0137935
|
| [10] |
Li WS, Nomoto K, Hu ZY, et al. Field-plated Ga2O3 trench Schottky barrier diode with a BV2/Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41: 107 doi: 10.1109/LED.2019.2953559
|
| [11] |
Gabriel K, Fayrouz H, Nessakh B, et al. 2.45 GHz low-power diode bridge rectifier design. 2023 International Conference on Microelectronics (ICM), 2023: 268 doi: 10.1109/ICM60448.2023.10378938
|
| [12] |
Busatto T, R?nnberg SK, Bollen MHJ. Comparison of models of single-phase diode bridge rectifiers for their use in harmonic studies with many devices. Energies, 2021, 15(1): 66 doi: 10.3390/en15010066
|
| [13] |
Zhou K, He Q, Jian G, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64: 219403 doi: 10.1007/s11432-021-3224-2
|
| [14] |
Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67: 159404 doi: 10.1007/s11432-024-3992-8
|
| [15] |
Liu Z, Zhi Y S, Zhang S H, et al. Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors. Sci China Technol Sci, 2021, 64(1): 59 doi: 10.1007/s11431-020-1701-2
|
| [16] |
Wu D, Zhao Z H, Lu W, et al. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed. Nano Res, 2021, 14: 1973 doi: 10.1007/s12274-021-3346-7
|
| [17] |
Orita M, Ohta H, Hirano M, et al. Deep-ultraviolet transparent conductive β-Ga2O3 thin films. Appl Phys Lett, 2000, 77(25): 4166 doi: 10.1063/1.1330559
|
| [18] |
Liu Z, Wang X, Liu Y, et al. A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode. J Mater Chem C, 2019, 7: 13920 doi: 10.1039/C9TC04912F
|
| [1] |
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100(1): 013504 doi: 10.1063/1.3674287
|
| [2] |
Higashiwaki M, Sasaki K, Kamimura T, et al. Depletion-mode Ga2O3 metal–oxide–semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Appl Phys Lett, 2013, 103(12): 123511 doi: 10.1063/1.4821858
|
| [3] |
Ahmadi E, Oshima Y. Materials issues and devices of α- and β-Ga2O3. J Appl Phys, 2019, 126(16): 160901 doi: 10.1063/1.5123213
|
| [4] |
Sasaki K, Kuramata A, Masui T, et al. Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy. Appl Phys Express, 2012, 5(3): 035502 doi: 10.1143/APEX.5.035502
|
| [5] |
Ji M, Taylor NR, Kravchenko I, et al. Demonstration of large-size vertical Ga2O3 Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36: 41
|
| [6] |
Wang C, Zhang J, Xu S, et al. Progress in state-of-the-art technologies of Ga2O3 devices. J Phys D: Appl Phys, 2021, 54(24): 243001 doi: 10.1088/1361-6463/abe158
|
| [7] |
Hu Z, Zhao C, Feng Q, et al. The investigation of β-Ga2O3 Schottky diode with floating field ring termination and the interface states. ECS J Solid State Sci Technol, 2020, 9(2): 025001 doi: 10.1149/2162-8777/ab6162
|
| [8] |
Roy S, Bhattacharyya A, Ranga P, et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 2021, 42(8): 1140 doi: 10.1109/LED.2021.3089945
|
| [9] |
Roy S, Bhattacharyya A, Peterson C, et al. 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate. Appl Phys Lett, 2023, 122(15): 152101 doi: 10.1063/5.0137935
|
| [10] |
Li WS, Nomoto K, Hu ZY, et al. Field-plated Ga2O3 trench Schottky barrier diode with a BV2/Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41: 107 doi: 10.1109/LED.2019.2953559
|
| [11] |
Gabriel K, Fayrouz H, Nessakh B, et al. 2.45 GHz low-power diode bridge rectifier design. 2023 International Conference on Microelectronics (ICM), 2023: 268 doi: 10.1109/ICM60448.2023.10378938
|
| [12] |
Busatto T, R?nnberg SK, Bollen MHJ. Comparison of models of single-phase diode bridge rectifiers for their use in harmonic studies with many devices. Energies, 2021, 15(1): 66 doi: 10.3390/en15010066
|
| [13] |
Zhou K, He Q, Jian G, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64: 219403 doi: 10.1007/s11432-021-3224-2
|
| [14] |
Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67: 159404 doi: 10.1007/s11432-024-3992-8
|
| [15] |
Liu Z, Zhi Y S, Zhang S H, et al. Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors. Sci China Technol Sci, 2021, 64(1): 59 doi: 10.1007/s11431-020-1701-2
|
| [16] |
Wu D, Zhao Z H, Lu W, et al. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed. Nano Res, 2021, 14: 1973 doi: 10.1007/s12274-021-3346-7
|
| [17] |
Orita M, Ohta H, Hirano M, et al. Deep-ultraviolet transparent conductive β-Ga2O3 thin films. Appl Phys Lett, 2000, 77(25): 4166 doi: 10.1063/1.1330559
|
| [18] |
Liu Z, Wang X, Liu Y, et al. A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode. J Mater Chem C, 2019, 7: 13920 doi: 10.1039/C9TC04912F
|
Article views: 1538 Times PDF downloads: 180 Times Cited by: 0 Times
Received: 23 April 2025 Revised: 06 June 2025 Online: Accepted Manuscript: 07 July 2025Uncorrected proof: 13 August 2025Published: 15 January 2026
| Citation: |
Haifeng Chen, Yuduo Zhang, Xiexin Sun, Jingguo Zong, Qin Lu, Yifan Jia, Zhenfu Feng, Zhan Wang, Lijun Li, Xiangtai Liu, Shaoqing Wang, Yue Hao. Solar-blind UV light-modulated β-Ga2O3 full-wave bridge rectifier[J]. Journal of Semiconductors, 2026, 47(1): 012301. doi: 10.1088/1674-4926/25040027
****
H F Chen, Y D Zhang, X X Sun, J G Zong, Q Lu, Y F Jia, Z F Feng, Z Wang, L J Li, X T Liu, S Q Wang, and Y Hao, Solar-blind UV light-modulated β-Ga2O3 full-wave bridge rectifier[J]. J. Semicond., 2026, 47(1): 012301 doi: 10.1088/1674-4926/25040027
|
Haifeng Chen received the Ph.D. degree from Xidian University in 2008. He is currently a Professor at the Xi’an University of Posts and Telecommunications. His research interests focus on Ga2O3 material and devices
Yuduo Zhang received his BS degree from Xi’an University of Posts and Telecommunications in 2023. He is currently a Master’s student at Xian University of Posts and telecommunications. His research focuses on Ga2O3 devices
Xiexin Sun is currently pursuing a master’s degree at Xi’an University of Posts and Telecommunications. He is currently a first-year student in the School of Electronic Engineering at Xi’an University of Posts and Telecommunications. His research interests lie in Ga2O3 devices and DC?DC circuits
| [1] |
Higashiwaki M, Sasaki K, Kuramata A, et al. Gallium oxide (Ga2O3) metal–semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 2012, 100(1): 013504 doi: 10.1063/1.3674287
|
| [2] |
Higashiwaki M, Sasaki K, Kamimura T, et al. Depletion-mode Ga2O3 metal–oxide–semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Appl Phys Lett, 2013, 103(12): 123511 doi: 10.1063/1.4821858
|
| [3] |
Ahmadi E, Oshima Y. Materials issues and devices of α- and β-Ga2O3. J Appl Phys, 2019, 126(16): 160901 doi: 10.1063/1.5123213
|
| [4] |
Sasaki K, Kuramata A, Masui T, et al. Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy. Appl Phys Express, 2012, 5(3): 035502 doi: 10.1143/APEX.5.035502
|
| [5] |
Ji M, Taylor NR, Kravchenko I, et al. Demonstration of large-size vertical Ga2O3 Schottky barrier diodes. IEEE Trans Power Electron, 2020, 36: 41
|
| [6] |
Wang C, Zhang J, Xu S, et al. Progress in state-of-the-art technologies of Ga2O3 devices. J Phys D: Appl Phys, 2021, 54(24): 243001 doi: 10.1088/1361-6463/abe158
|
| [7] |
Hu Z, Zhao C, Feng Q, et al. The investigation of β-Ga2O3 Schottky diode with floating field ring termination and the interface states. ECS J Solid State Sci Technol, 2020, 9(2): 025001 doi: 10.1149/2162-8777/ab6162
|
| [8] |
Roy S, Bhattacharyya A, Ranga P, et al. High-k oxide field-plated vertical (001) β-Ga2O3 Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm2. IEEE Electron Device Lett, 2021, 42(8): 1140 doi: 10.1109/LED.2021.3089945
|
| [9] |
Roy S, Bhattacharyya A, Peterson C, et al. 2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate. Appl Phys Lett, 2023, 122(15): 152101 doi: 10.1063/5.0137935
|
| [10] |
Li WS, Nomoto K, Hu ZY, et al. Field-plated Ga2O3 trench Schottky barrier diode with a BV2/Ron, sp of up to 0.95 GW/cm2. IEEE Electron Device Lett, 2020, 41: 107 doi: 10.1109/LED.2019.2953559
|
| [11] |
Gabriel K, Fayrouz H, Nessakh B, et al. 2.45 GHz low-power diode bridge rectifier design. 2023 International Conference on Microelectronics (ICM), 2023: 268 doi: 10.1109/ICM60448.2023.10378938
|
| [12] |
Busatto T, R?nnberg SK, Bollen MHJ. Comparison of models of single-phase diode bridge rectifiers for their use in harmonic studies with many devices. Energies, 2021, 15(1): 66 doi: 10.3390/en15010066
|
| [13] |
Zhou K, He Q, Jian G, et al. A unified hybrid compact model of β-Ga2O3 Schottky barrier diodes for mixer and rectifier applications. Sci China Inf Sci, 2021, 64: 219403 doi: 10.1007/s11432-021-3224-2
|
| [14] |
Hong W, Zhang C, Zhang F, et al. Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci China Inf Sci, 2024, 67: 159404 doi: 10.1007/s11432-024-3992-8
|
| [15] |
Liu Z, Zhi Y S, Zhang S H, et al. Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors. Sci China Technol Sci, 2021, 64(1): 59 doi: 10.1007/s11431-020-1701-2
|
| [16] |
Wu D, Zhao Z H, Lu W, et al. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed. Nano Res, 2021, 14: 1973 doi: 10.1007/s12274-021-3346-7
|
| [17] |
Orita M, Ohta H, Hirano M, et al. Deep-ultraviolet transparent conductive β-Ga2O3 thin films. Appl Phys Lett, 2000, 77(25): 4166 doi: 10.1063/1.1330559
|
| [18] |
Liu Z, Wang X, Liu Y, et al. A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode. J Mater Chem C, 2019, 7: 13920 doi: 10.1039/C9TC04912F
|
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