Yongping Wei is a master’s degree student majoring in microelectronics and solid-state electronics in Xiamen University. His research interests focus on the regulation of nitride spin injection and device applications based on topological spin tunnel junctions.
Yaping Wu received her PhD degree in microelectronics and solid-state electronics from Xiamen University and is now a professor and doctoral supervisor at the Department of Physics, Xiamen University. She has long been dedicated to the research of new structural materials and new functional devices, including wide bandgap semiconductor optoelectronic devices, quantum structures and devices, and spintronics.
Fig. 1.
(Color online) (a) Schematic side view of the spin-LED structure with an InAs quantum dot active layer. The spin injector consists of MgO (2.5 nm)/CoFeB (1.2 nm)/Ta (3 nm)/Cr (3 nm). (b) HR-STEM image showing the cross-section of the spin injector. Scale bar, 5 nm. (c) Anomalous hall effect resistance (RAHE) of the spin injector as a function of pulsed current injected in the injector channel with zero in-plane field for switching at 300 K. (d) Room temperature MOKE images of the injector Hall bar channel after applying one single pulse of ?55 mA (tpuls = 1 ms) with in-plane field Hx = ?15 mT. (e) RAHE of a W-based spin injector as a function of Ipulse with different tpulse under small in-plane field Hx = ?10 mT. (f) Comparison of Pc and RAHE loops as a function of Ipulse. (g) Polarization-resolved electroluminescence characterization, switching with Hx = +10 mT and ±30 mA. (h) Polarization-resolved electroluminescence characterization, switching with Hx = 0 T and ±30 mA. (i) Repetition measurement of Pc at 300 K and Hz = 0 with 30 cycles of magnetization switching. In each cycle, the magnetization is switched by two Ipulse for positive and negative 25 mA with Hx = +10 mT. Copyright 2024, Springer Nature[8].
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